Paper Abstract and Keywords |
Presentation |
2009-12-04 13:30
Simplification of Structures of Si X-ray Detectors (Silicon Drift Detector)
-- Evaluation by simulation -- Seigo Kitanoya, Takayuki Miyake, Yukihiro Taniguchi, Hideharu Matsuura (Osaka Electro-Comm Univ.) SDM2009-160 Link to ES Tech. Rep. Archives: SDM2009-160 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Several regulations for hazardous substances have been enforced due to the increase of awareness of environmental issues. To reduce those measurement times, it is required to carry out ready measurements. Since past X-ray detectors were operated at liquid nitrogen temperature, however, X-ray analysis equipments with those X-ray detectors were grown in size. Recently, silicon drift detectors (SDD) cooled by Peltier devices have been used. Because the structure of SDD with many p-rings is complicated, the cost of SDD rises. We have proposed and developed the simplified structure of X-ray detectors with only three p-rings. In this study, we aim to solve problems in our detectors. To detect the X-ray fluorescence of Cd, moreover, by using device simulator we investigate the best structure of X-ray detectors with one p-ring using higher resistivity and thicker Si, which we have proposed. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Silicon drift detector / X-ray Si detector / New structure of X-ray detector / Price reduction / Higher resistivity Si / Thicker Si / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 321, SDM2009-160, pp. 49-54, Dec. 2009. |
Paper # |
SDM2009-160 |
Date of Issue |
2009-11-27 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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SDM2009-160 Link to ES Tech. Rep. Archives: SDM2009-160 |
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