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Paper Abstract and Keywords
Presentation 2009-12-04 11:00
Analysis of Layout Structure Dependence on Distance/Space Variation for MOS Transistors
Yuichi Sadohira, Shigetoshi Nakatake (Univ. of Kitakyusyu) VLD2009-61 DC2009-48
Abstract (in Japanese) (See Japanese page) 
(in English) In this paper, we investigate the dependency
of layout structures such as diffusion sharing/isolation and gate division
on MOS transistor characteristics
against the variation caused by manufacturing.
We developed TEG chips on 90nm manufacturing process
and evaluated them for the investigation.
Each chip is composed of 7x7 units,
various sizes and layouts of MOS transistors
are embedded in each of units.
We measured Vth of each transistors and analyzed them.
In the analysis,
we identified the space-dependent components
and distance-dependent components
from the variation values of the measured Vth.
Keyword (in Japanese) (See Japanese page) 
(in English) MOS Transistor / Manufacturing Variation / Distance-Dependent Variation / Space-Dependent Variation / Layout-Structure-Dependency / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 315, VLD2009-61, pp. 137-142, Dec. 2009.
Paper # VLD2009-61 
Date of Issue 2009-11-25 (VLD, DC) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF VLD2009-61 DC2009-48

Conference Information
Conference Date 2009-12-02 - 2009-12-04 
Place (in Japanese) (See Japanese page) 
Place (in English) Kochi City Culture-Plaza 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Design Gaia 2009 ―New Field of VLSI Design― 
Paper Information
Registration To VLD 
Conference Code 2009-12-VLD-DC-SLDM-CPSY-RECONF-ICD-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Analysis of Layout Structure Dependence on Distance/Space Variation for MOS Transistors 
Sub Title (in English)  
Keyword(1) MOS Transistor  
Keyword(2) Manufacturing Variation  
Keyword(3) Distance-Dependent Variation  
Keyword(4) Space-Dependent Variation  
Keyword(5) Layout-Structure-Dependency  
1st Author's Name Yuichi Sadohira  
1st Author's Affiliation The University of Kitakyusyu (Univ. of Kitakyusyu)
2nd Author's Name Shigetoshi Nakatake  
2nd Author's Affiliation The University of Kitakyusyu (Univ. of Kitakyusyu)
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Date Time 2009-12-04 11:00:00 
Presentation Time 20 
Registration for VLD 
Paper # IEICE-VLD2009-61,IEICE-DC2009-48 
Volume (vol) IEICE-109 
Number (no) no.315(VLD), no.316(DC) 
Page pp.137-142 
#Pages IEICE-6 
Date of Issue IEICE-VLD-2009-11-25,IEICE-DC-2009-11-25 

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