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| Presentation | 2009-12-04 10:00 Changed of Acceptor Density in Al-doped 6H-SiC Epilayer by Electron Irradiattion Takunori Nojiri, Hideki Yanagisawa, Yosiko Myojin, Hideharu Matsuura (Osaka Electro-Comm Univ), Takeshi Ohshima (JAEA)  SDM2009-153 Link to ES Tech. Rep. Archives: SDM2009-153 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In Al-doped 6H-SiC epilayers irradiated with electrons, the densities and energy levels of acceptor and hole traps were evaluated by FCCS using the temperature-dependent hole concentration obtained by Hall-effect measurements in the van der pauw configuration. Then, the density of Al acceptors was found to be significantly reduced by electron irradiation. To investigate the origin of this phenomenon, we discuss the changes of acceptor densities and defects in Al-doped 6H-SiC epilayers irradiated with 100 keV electrons. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | 6H-SiC / Al-doped SiC / p-type SiC / Electron irradiation / Reduction in hole concentration / Decrease in acceptor density / Intrinsic defects / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 321, SDM2009-153, pp. 11-16, Dec. 2009. | |
| Paper # | SDM2009-153 | |
| Date of Issue | 2009-11-27 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2009-153 Link to ES Tech. Rep. Archives: SDM2009-153 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2009-12-04 - 2009-12-04 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | NAIST |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Fabrication, Evaluation for Si Related Materials, |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2009-12-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Changed of Acceptor Density in Al-doped 6H-SiC Epilayer by Electron Irradiattion |
| Sub Title (in English) | |
| Keyword(1) | 6H-SiC |
| Keyword(2) | Al-doped SiC |
| Keyword(3) | p-type SiC |
| Keyword(4) | Electron irradiation |
| Keyword(5) | Reduction in hole concentration |
| Keyword(6) | Decrease in acceptor density |
| Keyword(7) | Intrinsic defects |
| Keyword(8) | |
| 1st Author's Name | Takunori Nojiri |
| 1st Author's Affiliation | Osaka Electro-Communication University (Osaka Electro-Comm Univ) |
| 2nd Author's Name | Hideki Yanagisawa |
| 2nd Author's Affiliation | Osaka Electro-Communication University (Osaka Electro-Comm Univ) |
| 3rd Author's Name | Yosiko Myojin |
| 3rd Author's Affiliation | Osaka Electro-Communication University (Osaka Electro-Comm Univ) |
| 4th Author's Name | Hideharu Matsuura |
| 4th Author's Affiliation | Osaka Electro-Communication University (Osaka Electro-Comm Univ) |
| 5th Author's Name | Takeshi Ohshima |
| 5th Author's Affiliation | Japan Atomic Energy Agency (JAEA) |
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| Speaker | Author-1 |
| Date Time | 2009-12-04 10:00:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2009-153 |
| Volume (vol) | vol.109 |
| Number (no) | no.321 |
| Page | pp.11-16 |
| #Pages | 6 |
| Date of Issue | 2009-11-27 (SDM) |
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