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Paper Abstract and Keywords
Presentation 2009-11-20 15:25
Development of GaN Schottky Diodes for Microwave Wireless Ubiquitous Power Distribution
Kensuke Takahashi, Jin-Ping Ao (Tokushima Univ.), Naoki Shinohara (Kyoto Univ.), Naoki Niwa (Kajima Corp.), Teruo Fujiwara (Sho Engineering Corp.), Yasuo Ohno (Tokushima Univ.) ED2009-158 CPM2009-132 LQE2009-137 Link to ES Tech. Rep. Archives: ED2009-158 CPM2009-132 LQE2009-137
Abstract (in Japanese) (See Japanese page) 
(in English) For microwave power rectification circuits(rectenna), high power, high conversion efficiency and compact size rectifying diodes are required. Gallium nitride(GaN)Schottky diodes with a lateral electrode layout was developed on a semi-insulating SiC substrate for microwave wireless ubiquitous power distribution. With DC and RF measurement, ON-state resistance, access resistance and capacitance are evaluated. A rectenna circuit with the GaN diode is developed and showed high conversion efficiency and compact size in high power RF/DC conversion.
Keyword (in Japanese) (See Japanese page) 
(in English) Microwave Wireless Power Transmission / DIode / Rectenna(Rectifying antenna) / GaN / Breakdown voltage / ON-state resistance / Capacitance /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 290, LQE2009-137, pp. 145-150, Nov. 2009.
Paper # LQE2009-137 
Date of Issue 2009-11-12 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2009-158 CPM2009-132 LQE2009-137 Link to ES Tech. Rep. Archives: ED2009-158 CPM2009-132 LQE2009-137

Conference Information
Committee ED LQE CPM  
Conference Date 2009-11-19 - 2009-11-20 
Place (in Japanese) (See Japanese page) 
Place (in English) Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2009-11-ED-LQE-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Development of GaN Schottky Diodes for Microwave Wireless Ubiquitous Power Distribution 
Sub Title (in English)  
Keyword(1) Microwave Wireless Power Transmission  
Keyword(2) DIode  
Keyword(3) Rectenna(Rectifying antenna)  
Keyword(4) GaN  
Keyword(5) Breakdown voltage  
Keyword(6) ON-state resistance  
Keyword(7) Capacitance  
1st Author's Name Kensuke Takahashi  
1st Author's Affiliation Tokushima University (Tokushima Univ.)
2nd Author's Name Jin-Ping Ao  
2nd Author's Affiliation Tokushima University (Tokushima Univ.)
3rd Author's Name Naoki Shinohara  
3rd Author's Affiliation Kyoto University (Kyoto Univ.)
4th Author's Name Naoki Niwa  
4th Author's Affiliation Kajima Corporation (Kajima Corp.)
5th Author's Name Teruo Fujiwara  
5th Author's Affiliation Sho Engineering Corporation (Sho Engineering Corp.)
6th Author's Name Yasuo Ohno  
6th Author's Affiliation Tokushima University (Tokushima Univ.)
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Date Time 2009-11-20 15:25:00 
Presentation Time 25 
Registration for LQE 
Paper # IEICE-ED2009-158,IEICE-CPM2009-132,IEICE-LQE2009-137 
Volume (vol) IEICE-109 
Number (no) no.288(ED), no.289(CPM), no.290(LQE) 
Page pp.145-150 
#Pages IEICE-6 
Date of Issue IEICE-ED-2009-11-12,IEICE-CPM-2009-11-12,IEICE-LQE-2009-11-12 

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