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| Presentation | 2009-11-20 15:00 50 W at 5 GHz RF output power performance of GaN-HEMT on Si substrate Shinichi Hoshi, Masanori Itoh, Toshiharu Marui, Hideyuki Okita, Yoshiaki Morino, Isao Tamai, Fumihiko Toda, Shohei Seki (Oki Electric Industry Co., Ltd.), Takashi Egawa (Nagoya Inst. of Tech.)  ED2009-157 CPM2009-131 LQE2009-136 Link to ES Tech. Rep. Archives: ED2009-157 CPM2009-131 LQE2009-136 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We have fabricated high RF power output devices using GaN-HEMT on Si substrate, that can be screened out by Hg probe C-V measurement about epi/sub interface issue in order to apply to RF power output applications. Then we have obtained the good RF power output characteristics of 48.8 dBm (75.6 W) with power added efficiency of 54.4% and thermal resistance of 2.76ºC/W at 2 GHz by 60 µm-thick Si substrate. These characteristics are almost compatible with those of GaN-HEMT on SiC devices we fabricated at the same time. We also evaluated the GaN-HEMT on Si devices at higher frequency and achieved the feasible performance of 7.58 W/mm and 47.14 dBm (51.8 W) at 5 GHz. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN-HEMT on Si substrate / epi/sub interface / Thermal resistance / RF output power performance / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 288, ED2009-157, pp. 139-144, Nov. 2009. | |
| Paper # | ED2009-157 | |
| Date of Issue | 2009-11-12 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2009-157 CPM2009-131 LQE2009-136 Link to ES Tech. Rep. Archives: ED2009-157 CPM2009-131 LQE2009-136 |
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| Conference Information | |
| Committee | ED LQE CPM |
| Conference Date | 2009-11-19 - 2009-11-20 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2009-11-ED-LQE-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 50 W at 5 GHz RF output power performance of GaN-HEMT on Si substrate |
| Sub Title (in English) | |
| Keyword(1) | GaN-HEMT on Si substrate |
| Keyword(2) | epi/sub interface |
| Keyword(3) | Thermal resistance |
| Keyword(4) | RF output power performance |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Shinichi Hoshi |
| 1st Author's Affiliation | Oki Electric Industry Co., Ltd. (Oki Electric Industry Co., Ltd.) |
| 2nd Author's Name | Masanori Itoh |
| 2nd Author's Affiliation | Oki Electric Industry Co., Ltd. (Oki Electric Industry Co., Ltd.) |
| 3rd Author's Name | Toshiharu Marui |
| 3rd Author's Affiliation | Oki Electric Industry Co., Ltd. (Oki Electric Industry Co., Ltd.) |
| 4th Author's Name | Hideyuki Okita |
| 4th Author's Affiliation | Oki Electric Industry Co., Ltd. (Oki Electric Industry Co., Ltd.) |
| 5th Author's Name | Yoshiaki Morino |
| 5th Author's Affiliation | Oki Electric Industry Co., Ltd. (Oki Electric Industry Co., Ltd.) |
| 6th Author's Name | Isao Tamai |
| 6th Author's Affiliation | Oki Electric Industry Co., Ltd. (Oki Electric Industry Co., Ltd.) |
| 7th Author's Name | Fumihiko Toda |
| 7th Author's Affiliation | Oki Electric Industry Co., Ltd. (Oki Electric Industry Co., Ltd.) |
| 8th Author's Name | Shohei Seki |
| 8th Author's Affiliation | Oki Electric Industry Co., Ltd. (Oki Electric Industry Co., Ltd.) |
| 9th Author's Name | Takashi Egawa |
| 9th Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
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| Speaker | Author-1 |
| Date Time | 2009-11-20 15:00:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2009-157, CPM2009-131, LQE2009-136 |
| Volume (vol) | vol.109 |
| Number (no) | no.288(ED), no.289(CPM), no.290(LQE) |
| Page | pp.139-144 |
| #Pages | 6 |
| Date of Issue | 2009-11-12 (ED, CPM, LQE) |
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