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| Presentation | 2009-11-20 09:30 AlN growth on period trench patterned AlN/sapphire by Low-pressure HVPE Kohei Fujita, Kazuteru Okuura, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Jyun Norimatsu, Hideki Hirayama (Riken)  ED2009-147 CPM2009-121 LQE2009-126 Link to ES Tech. Rep. Archives: ED2009-147 CPM2009-121 LQE2009-126 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | High-quality AlN thick film were grown on trench-patterned AlN template by Low-pressure HVPE. Compared with the normal template, the patterned template was founded to improve crystalline quality of AlN layer. In this study, the effect of the pattern periodicity was investigated. Results showed that the width of groove mainly influence the position depth of voids forming in AlN. A larger crack-free thickness of AlN layer (~30μm) was obtained when using a patterned AlN template with a wider groove. It is partly attributed to the higher forming position of voids. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | HVPE / AlN / trench-patterned / void / thick film / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 288, ED2009-147, pp. 91-94, Nov. 2009. | |
| Paper # | ED2009-147 | |
| Date of Issue | 2009-11-12 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2009-147 CPM2009-121 LQE2009-126 Link to ES Tech. Rep. Archives: ED2009-147 CPM2009-121 LQE2009-126 |
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| Conference Information | |
| Committee | ED LQE CPM |
| Conference Date | 2009-11-19 - 2009-11-20 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2009-11-ED-LQE-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | AlN growth on period trench patterned AlN/sapphire by Low-pressure HVPE |
| Sub Title (in English) | |
| Keyword(1) | HVPE |
| Keyword(2) | AlN |
| Keyword(3) | trench-patterned |
| Keyword(4) | void |
| Keyword(5) | thick film |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Kohei Fujita |
| 1st Author's Affiliation | Mie University (Mie Univ.) |
| 2nd Author's Name | Kazuteru Okuura |
| 2nd Author's Affiliation | Mie University (Mie Univ.) |
| 3rd Author's Name | Hideto Miyake |
| 3rd Author's Affiliation | Mie University (Mie Univ.) |
| 4th Author's Name | Kazumasa Hiramatsu |
| 4th Author's Affiliation | Mie University (Mie Univ.) |
| 5th Author's Name | Jyun Norimatsu |
| 5th Author's Affiliation | Riken (Riken) |
| 6th Author's Name | Hideki Hirayama |
| 6th Author's Affiliation | Riken (Riken) |
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| Speaker | Author-1 |
| Date Time | 2009-11-20 09:30:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2009-147, CPM2009-121, LQE2009-126 |
| Volume (vol) | vol.109 |
| Number (no) | no.288(ED), no.289(CPM), no.290(LQE) |
| Page | pp.91-94 |
| #Pages | 4 |
| Date of Issue | 2009-11-12 (ED, CPM, LQE) |
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