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| Presentation | 2009-11-20 10:20 Characterization of quaternary InAlGaN/GaN HEMT epi-structures fabricated on 4inch diameter Si substrates Mikiya Ichimura, Makoto Miyoshi, Mitsuhiro Tanaka (NGK Insulators, Ltd.), Takashi Egawa (Nagoya Inst. of Tech.)  ED2009-149 CPM2009-123 LQE2009-128 Link to ES Tech. Rep. Archives: ED2009-149 CPM2009-123 LQE2009-128 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | MOCVD growth and material characterization of quaternary InAlGaN/GaN HEMT structures, which allow for various combinations of lattice lengths and bandgaps, were carried out. As a result, it was confirmed that the 2DEG properties of InAlGaN/GaN heterostructures strongly depend on their composition and crystal quality of the InAlGaN barrier layers. A high 2DEG density of 2.3×1013cm-2 and a low sheet resistance of 210 Ωsq-1 with a 2DEG mobility of 1300 cm2V-1s-1 were observed for a sample grown on 2-inch sapphire. Moreover, a 2DEG density of 1.8×1013cm-2, a sheet resistance of 270 Ωsq-1 and a 2DEG mobility of 1270 cm2V-1s-1 were obtained for a sample grown on 4-inch silicon substrate with a good in-wafer uniformity. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | InAlGaN / InAlGaN/GaN / HEMT / Si substrate / MOCVD / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 288, ED2009-149, pp. 99-103, Nov. 2009. | |
| Paper # | ED2009-149 | |
| Date of Issue | 2009-11-12 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2009-149 CPM2009-123 LQE2009-128 Link to ES Tech. Rep. Archives: ED2009-149 CPM2009-123 LQE2009-128 |
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| Conference Information | |
| Committee | ED LQE CPM |
| Conference Date | 2009-11-19 - 2009-11-20 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2009-11-ED-LQE-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of quaternary InAlGaN/GaN HEMT epi-structures fabricated on 4inch diameter Si substrates |
| Sub Title (in English) | |
| Keyword(1) | InAlGaN |
| Keyword(2) | InAlGaN/GaN |
| Keyword(3) | HEMT |
| Keyword(4) | Si substrate |
| Keyword(5) | MOCVD |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Mikiya Ichimura |
| 1st Author's Affiliation | NGK Insulators, Ltd. (NGK Insulators, Ltd.) |
| 2nd Author's Name | Makoto Miyoshi |
| 2nd Author's Affiliation | NGK Insulators, Ltd. (NGK Insulators, Ltd.) |
| 3rd Author's Name | Mitsuhiro Tanaka |
| 3rd Author's Affiliation | NGK Insulators, Ltd. (NGK Insulators, Ltd.) |
| 4th Author's Name | Takashi Egawa |
| 4th Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
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| Speaker | Author-1 |
| Date Time | 2009-11-20 10:20:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2009-149, CPM2009-123, LQE2009-128 |
| Volume (vol) | vol.109 |
| Number (no) | no.288(ED), no.289(CPM), no.290(LQE) |
| Page | pp.99-103 |
| #Pages | 5 |
| Date of Issue | 2009-11-12 (ED, CPM, LQE) |
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