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Paper Abstract and Keywords
Presentation 2009-11-19 09:25
HVPE growth of {11-22} GaN Crystals on m-plane Sapphire Substrates
Hitoshi Sasaki, Hiroki Goto, Akira Usui (Furukawa Co., Ltd.) ED2009-129 CPM2009-103 LQE2009-108 Link to ES Tech. Rep. Archives: ED2009-129 CPM2009-103 LQE2009-108
Abstract (in Japanese) (See Japanese page) 
(in English) {11-22} semi-polar plane GaN crystal layers are grown on sapphire substrates using HVPE technique. MOCVD-grown GaN / HT-AlN double layer structure is used as a buffer layer between the 2-inch-diameter sapphire substrates and 25-µm-thick HVPE-GaN layers. FWHM of GaN{11-22} X-ray rocking curve (XRC) measured with the X-ray reflection along GaN m-axis is wider than that with the X-ray reflection across the m-axis. It is shown that FWHM is improved by using m-plane sapphire substrates misoriented toward the GaN c-axis. Selective area re-growth of GaN layers using the SiO2 mask stripes parallel to the GaN m-axis also suppresses the FWHM broadening along the m-axis. Furthermore, 700-μm-thick freestanding {11-22} GaN crystal is demonstrated.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / Crystal Growth / HVPE / Semi-polar Plane / {11-22} / Sapphire Substrate / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 290, LQE2009-108, pp. 5-8, Nov. 2009.
Paper # LQE2009-108 
Date of Issue 2009-11-12 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF ED2009-129 CPM2009-103 LQE2009-108 Link to ES Tech. Rep. Archives: ED2009-129 CPM2009-103 LQE2009-108

Conference Information
Committee ED LQE CPM  
Conference Date 2009-11-19 - 2009-11-20 
Place (in Japanese) (See Japanese page) 
Place (in English) Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2009-11-ED-LQE-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) HVPE growth of {11-22} GaN Crystals on m-plane Sapphire Substrates 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) Crystal Growth  
Keyword(3) HVPE  
Keyword(4) Semi-polar Plane  
Keyword(5) {11-22}  
Keyword(6) Sapphire Substrate  
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Keyword(8)  
1st Author's Name Hitoshi Sasaki  
1st Author's Affiliation Furukawa Company Limited (Furukawa Co., Ltd.)
2nd Author's Name Hiroki Goto  
2nd Author's Affiliation Furukawa Company Limited (Furukawa Co., Ltd.)
3rd Author's Name Akira Usui  
3rd Author's Affiliation Furukawa Company Limited (Furukawa Co., Ltd.)
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Speaker Author-1 
Date Time 2009-11-19 09:25:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2009-129, CPM2009-103, LQE2009-108 
Volume (vol) vol.109 
Number (no) no.288(ED), no.289(CPM), no.290(LQE) 
Page pp.5-8 
#Pages
Date of Issue 2009-11-12 (ED, CPM, LQE) 


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