Paper Abstract and Keywords |
Presentation |
2009-11-19 09:25
HVPE growth of {11-22} GaN Crystals on m-plane Sapphire Substrates Hitoshi Sasaki, Hiroki Goto, Akira Usui (Furukawa Co., Ltd.) ED2009-129 CPM2009-103 LQE2009-108 Link to ES Tech. Rep. Archives: ED2009-129 CPM2009-103 LQE2009-108 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
{11-22} semi-polar plane GaN crystal layers are grown on sapphire substrates using HVPE technique. MOCVD-grown GaN / HT-AlN double layer structure is used as a buffer layer between the 2-inch-diameter sapphire substrates and 25-µm-thick HVPE-GaN layers. FWHM of GaN{11-22} X-ray rocking curve (XRC) measured with the X-ray reflection along GaN m-axis is wider than that with the X-ray reflection across the m-axis. It is shown that FWHM is improved by using m-plane sapphire substrates misoriented toward the GaN c-axis. Selective area re-growth of GaN layers using the SiO2 mask stripes parallel to the GaN m-axis also suppresses the FWHM broadening along the m-axis. Furthermore, 700-μm-thick freestanding {11-22} GaN crystal is demonstrated. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN / Crystal Growth / HVPE / Semi-polar Plane / {11-22} / Sapphire Substrate / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 290, LQE2009-108, pp. 5-8, Nov. 2009. |
Paper # |
LQE2009-108 |
Date of Issue |
2009-11-12 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2009-129 CPM2009-103 LQE2009-108 Link to ES Tech. Rep. Archives: ED2009-129 CPM2009-103 LQE2009-108 |
Conference Information |
Committee |
ED LQE CPM |
Conference Date |
2009-11-19 - 2009-11-20 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
|
Paper Information |
Registration To |
LQE |
Conference Code |
2009-11-ED-LQE-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
HVPE growth of {11-22} GaN Crystals on m-plane Sapphire Substrates |
Sub Title (in English) |
|
Keyword(1) |
GaN |
Keyword(2) |
Crystal Growth |
Keyword(3) |
HVPE |
Keyword(4) |
Semi-polar Plane |
Keyword(5) |
{11-22} |
Keyword(6) |
Sapphire Substrate |
Keyword(7) |
|
Keyword(8) |
|
1st Author's Name |
Hitoshi Sasaki |
1st Author's Affiliation |
Furukawa Company Limited (Furukawa Co., Ltd.) |
2nd Author's Name |
Hiroki Goto |
2nd Author's Affiliation |
Furukawa Company Limited (Furukawa Co., Ltd.) |
3rd Author's Name |
Akira Usui |
3rd Author's Affiliation |
Furukawa Company Limited (Furukawa Co., Ltd.) |
4th Author's Name |
|
4th Author's Affiliation |
() |
5th Author's Name |
|
5th Author's Affiliation |
() |
6th Author's Name |
|
6th Author's Affiliation |
() |
7th Author's Name |
|
7th Author's Affiliation |
() |
8th Author's Name |
|
8th Author's Affiliation |
() |
9th Author's Name |
|
9th Author's Affiliation |
() |
10th Author's Name |
|
10th Author's Affiliation |
() |
11th Author's Name |
|
11th Author's Affiliation |
() |
12th Author's Name |
|
12th Author's Affiliation |
() |
13th Author's Name |
|
13th Author's Affiliation |
() |
14th Author's Name |
|
14th Author's Affiliation |
() |
15th Author's Name |
|
15th Author's Affiliation |
() |
16th Author's Name |
|
16th Author's Affiliation |
() |
17th Author's Name |
|
17th Author's Affiliation |
() |
18th Author's Name |
|
18th Author's Affiliation |
() |
19th Author's Name |
|
19th Author's Affiliation |
() |
20th Author's Name |
|
20th Author's Affiliation |
() |
Speaker |
Author-1 |
Date Time |
2009-11-19 09:25:00 |
Presentation Time |
25 minutes |
Registration for |
LQE |
Paper # |
ED2009-129, CPM2009-103, LQE2009-108 |
Volume (vol) |
vol.109 |
Number (no) |
no.288(ED), no.289(CPM), no.290(LQE) |
Page |
pp.5-8 |
#Pages |
4 |
Date of Issue |
2009-11-12 (ED, CPM, LQE) |
|