Paper Abstract and Keywords |
Presentation |
2009-11-19 16:10
Reduction in operating voltage of UV laser diode Tomoki Ichikawa, Kenichiro Takeda, Yuji Ogiso, Kengo Nagata, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.), Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Hirofumi Kan (Hamamatsu Photonics K.K.) ED2009-142 CPM2009-116 LQE2009-121 Link to ES Tech. Rep. Archives: ED2009-142 CPM2009-116 LQE2009-121 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Annealing condition for n-type electrode in AlGaN-based UV LD was investigated. High temperature annealing is found to be effective to reduce contact resistance. Series resistance and operating voltage of UV LD can be successfully reduced by high temperature annealing of n-type electrode. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
AlGaN / GaN / ultraviolet / laser diode / operating voltage / / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 290, LQE2009-121, pp. 65-69, Nov. 2009. |
Paper # |
LQE2009-121 |
Date of Issue |
2009-11-12 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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Download PDF |
ED2009-142 CPM2009-116 LQE2009-121 Link to ES Tech. Rep. Archives: ED2009-142 CPM2009-116 LQE2009-121 |
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