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| Presentation | 2009-11-13 15:25 Atomic Scale Analysis of the Degradation Mechanism of the Integrity High-k/Metal-gate Interface Caused by the Interaction between Point-Defects and Residual Strain around the Interface Ken Suzuki, Yuta Itoh, Tatsuya Inoue, Hideo Miura (Tohoku Univ.), Hideki Yoshikawa, Keisuke Kobayashi (National Inst. for Materials Science), Seiji Samukawa (Tohoku Univ.)  SDM2009-149 Link to ES Tech. Rep. Archives: SDM2009-149 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Control of the interfacial crystallographic structure between a dielectric film and a gate electrode is one of the most critical issues for assuring the high performance and the reliability of a stacked MOS structure using high-k dielectric thin films. In this study, quantum chemical molecular dynamics simulations were applied to explicate the mechanism of degradation of interfacial integrity of the gate stack systems which is caused by point defects. We found that point defects such as oxygen and carbon interstitials deteriorate the electronic quality of a hafnium dioxide film and the W/HfO2 interface structure. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | W/HfO2 interface / Reliability / Strain / Point defect / Quantum chemical molecular dynamics method / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 278, SDM2009-149, pp. 79-84, Nov. 2009. | |
| Paper # | SDM2009-149 | |
| Date of Issue | 2009-11-05 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2009-149 Link to ES Tech. Rep. Archives: SDM2009-149 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2009-11-12 - 2009-11-13 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process, Device, Circuit Simulation, etc. |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2009-11-SDM |
| Language | English (Japanese title is available) |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Atomic Scale Analysis of the Degradation Mechanism of the Integrity High-k/Metal-gate Interface Caused by the Interaction between Point-Defects and Residual Strain around the Interface |
| Sub Title (in English) | |
| Keyword(1) | W/HfO2 interface |
| Keyword(2) | Reliability |
| Keyword(3) | Strain |
| Keyword(4) | Point defect |
| Keyword(5) | Quantum chemical molecular dynamics method |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Ken Suzuki |
| 1st Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 2nd Author's Name | Yuta Itoh |
| 2nd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 3rd Author's Name | Tatsuya Inoue |
| 3rd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 4th Author's Name | Hideo Miura |
| 4th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 5th Author's Name | Hideki Yoshikawa |
| 5th Author's Affiliation | National Institute for Materials Science (National Inst. for Materials Science) |
| 6th Author's Name | Keisuke Kobayashi |
| 6th Author's Affiliation | National Institute for Materials Science (National Inst. for Materials Science) |
| 7th Author's Name | Seiji Samukawa |
| 7th Author's Affiliation | Tohoku University (Tohoku Univ.) |
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| Speaker | Author-1 |
| Date Time | 2009-11-13 15:25:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2009-149 |
| Volume (vol) | vol.109 |
| Number (no) | no.278 |
| Page | pp.79-84 |
| #Pages | 6 |
| Date of Issue | 2009-11-05 (SDM) |
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