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| Presentation | 2009-11-12 15:05 HiSIM-IGBT: A Compact IGBT Model for Circuit Simulation Masataka Miyake, Hiroki Masuoka, Uwe Feldmann, Mitiko Miura-Mattausch (Hiroshima Univ.)  SDM2009-139 Link to ES Tech. Rep. Archives: SDM2009-139 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | HiSIM-IGBT, a compact IGBT (Insulated Gate Bipolar Transistor) model for circuit simulation has been developed. The model can be applied to circuit designs with IGBTs for power conversion in the voltage range between several hundreds and thousands. It holds gate, collector and emitter terminals and an internal base (drain) node. To the FET part, surface-potential-based accurate MOSFET model ``HiSIM'' is applied, while a base resistance model is newly developed. HiSIM-IGBT can accurately reproduce fundamental characteristics and switching behaviors of IGBTs, which enables faster and more accurate circuit designs with IGBTs. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | IGBT / HiSIM / power device / compact model / base resistance / surface potential / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 278, SDM2009-139, pp. 23-27, Nov. 2009. | |
| Paper # | SDM2009-139 | |
| Date of Issue | 2009-11-05 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2009-139 Link to ES Tech. Rep. Archives: SDM2009-139 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2009-11-12 - 2009-11-13 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process, Device, Circuit Simulation, etc. |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2009-11-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | HiSIM-IGBT: A Compact IGBT Model for Circuit Simulation |
| Sub Title (in English) | |
| Keyword(1) | IGBT |
| Keyword(2) | HiSIM |
| Keyword(3) | power device |
| Keyword(4) | compact model |
| Keyword(5) | base resistance |
| Keyword(6) | surface potential |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Masataka Miyake |
| 1st Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 2nd Author's Name | Hiroki Masuoka |
| 2nd Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 3rd Author's Name | Uwe Feldmann |
| 3rd Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 4th Author's Name | Mitiko Miura-Mattausch |
| 4th Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
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| Speaker | Author-1 |
| Date Time | 2009-11-12 15:05:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2009-139 |
| Volume (vol) | vol.109 |
| Number (no) | no.278 |
| Page | pp.23-27 |
| #Pages | 5 |
| Date of Issue | 2009-11-05 (SDM) |
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