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Paper Abstract and Keywords
Presentation 2009-11-12 15:55
Device Modeling and Simulation for CMOS Biosensor Applications
Shigeyasu Uno, Kazuo Nakazato (Nagoya Univ.) SDM2009-141 Link to ES Tech. Rep. Archives: SDM2009-141
Abstract (in Japanese) (See Japanese page) 
(in English) Modeling and simulation of Ion-sensitive Field-Effect Transistor (ISFET) operation is presented. A brief explanation of ISFET operation principle, electrolyte model, and semiconductor/electrorlyte interface model is presented. One- and two-dimensional simulation of pH sensitivity of ISFET with Si3N4 ion-sensitive layer are carried out to show that flatband voltage (and hence threshold voltage) increases with increasing pH. Three-dimensional modeling of DNA detection using ISFET, as well as quasi-three-dimensional modeling of cylindrical nanowire ISFET, are also presented.
Keyword (in Japanese) (See Japanese page) 
(in English) Biosensing / ISFET / modeling / simulation / / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 278, SDM2009-141, pp. 33-37, Nov. 2009.
Paper # SDM2009-141 
Date of Issue 2009-11-05 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2009-141 Link to ES Tech. Rep. Archives: SDM2009-141

Conference Information
Committee SDM  
Conference Date 2009-11-12 - 2009-11-13 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process, Device, Circuit Simulation, etc. 
Paper Information
Registration To SDM 
Conference Code 2009-11-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Device Modeling and Simulation for CMOS Biosensor Applications 
Sub Title (in English)  
Keyword(1) Biosensing  
Keyword(2) ISFET  
Keyword(3) modeling  
Keyword(4) simulation  
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1st Author's Name Shigeyasu Uno  
1st Author's Affiliation Nagoya University (Nagoya Univ.)
2nd Author's Name Kazuo Nakazato  
2nd Author's Affiliation Nagoya University (Nagoya Univ.)
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Speaker Author-1 
Date Time 2009-11-12 15:55:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2009-141 
Volume (vol) vol.109 
Number (no) no.278 
Page pp.33-37 
#Pages
Date of Issue 2009-11-05 (SDM) 


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