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Paper Abstract and Keywords
Presentation 2009-10-30 15:45
Study on compositional transition layers at SiO2/Si interface formed by radical oxidation
Tomoyuki Suwa, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.), Toyohiko Kinoshita, Takayuki Muro, Yukako Kato (JASRI) SDM2009-134 Link to ES Tech. Rep. Archives: SDM2009-134
Abstract (in Japanese) (See Japanese page) 
(in English) For clarifying the atomic structure of transition layer and valence band offset at Si/SiO2 interface formed by radical oxidation, the photoelectron spectra of Si 2p and O 1s were evaluated by high resolution angle-resolved soft X-ray photoelectron spectroscopy. The differences of Si 2p3/2 spectrum from sub-oxides which construct the transition layer at Si/SiO2 interface are observed for different Si surface orientation such as Si(100), Si(111), Si(110), and Si(551).
Keyword (in Japanese) (See Japanese page) 
(in English) SiO2 / interface / XPS / radical oxidation / / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 257, SDM2009-134, pp. 77-80, Oct. 2009.
Paper # SDM2009-134 
Date of Issue 2009-10-22 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2009-134 Link to ES Tech. Rep. Archives: SDM2009-134

Conference Information
Committee SDM  
Conference Date 2009-10-29 - 2009-10-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Semiconductor process science and new technology 
Paper Information
Registration To SDM 
Conference Code 2009-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Study on compositional transition layers at SiO2/Si interface formed by radical oxidation 
Sub Title (in English)  
Keyword(1) SiO2  
Keyword(2) interface  
Keyword(3) XPS  
Keyword(4) radical oxidation  
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1st Author's Name Tomoyuki Suwa  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Akinobu Teramoto  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Tadahiro Ohmi  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Takeo Hattori  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name Toyohiko Kinoshita  
5th Author's Affiliation Japan Synchrotron Radiation Research Institute (JASRI)
6th Author's Name Takayuki Muro  
6th Author's Affiliation Japan Synchrotron Radiation Research Institute (JASRI)
7th Author's Name Yukako Kato  
7th Author's Affiliation Japan Synchrotron Radiation Research Institute (JASRI)
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Speaker Author-1 
Date Time 2009-10-30 15:45:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2009-134 
Volume (vol) vol.109 
Number (no) no.257 
Page pp.77-80 
#Pages
Date of Issue 2009-10-22 (SDM) 


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