Paper Abstract and Keywords |
Presentation |
2009-10-30 15:45
Study on compositional transition layers at SiO2/Si interface formed by radical oxidation Tomoyuki Suwa, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.), Toyohiko Kinoshita, Takayuki Muro, Yukako Kato (JASRI) SDM2009-134 Link to ES Tech. Rep. Archives: SDM2009-134 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
For clarifying the atomic structure of transition layer and valence band offset at Si/SiO2 interface formed by radical oxidation, the photoelectron spectra of Si 2p and O 1s were evaluated by high resolution angle-resolved soft X-ray photoelectron spectroscopy. The differences of Si 2p3/2 spectrum from sub-oxides which construct the transition layer at Si/SiO2 interface are observed for different Si surface orientation such as Si(100), Si(111), Si(110), and Si(551). |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
SiO2 / interface / XPS / radical oxidation / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 257, SDM2009-134, pp. 77-80, Oct. 2009. |
Paper # |
SDM2009-134 |
Date of Issue |
2009-10-22 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2009-134 Link to ES Tech. Rep. Archives: SDM2009-134 |
Conference Information |
Committee |
SDM |
Conference Date |
2009-10-29 - 2009-10-30 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Tohoku University |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Semiconductor process science and new technology |
Paper Information |
Registration To |
SDM |
Conference Code |
2009-10-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Study on compositional transition layers at SiO2/Si interface formed by radical oxidation |
Sub Title (in English) |
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Keyword(1) |
SiO2 |
Keyword(2) |
interface |
Keyword(3) |
XPS |
Keyword(4) |
radical oxidation |
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1st Author's Name |
Tomoyuki Suwa |
1st Author's Affiliation |
Tohoku University (Tohoku Univ.) |
2nd Author's Name |
Akinobu Teramoto |
2nd Author's Affiliation |
Tohoku University (Tohoku Univ.) |
3rd Author's Name |
Tadahiro Ohmi |
3rd Author's Affiliation |
Tohoku University (Tohoku Univ.) |
4th Author's Name |
Takeo Hattori |
4th Author's Affiliation |
Tohoku University (Tohoku Univ.) |
5th Author's Name |
Toyohiko Kinoshita |
5th Author's Affiliation |
Japan Synchrotron Radiation Research Institute (JASRI) |
6th Author's Name |
Takayuki Muro |
6th Author's Affiliation |
Japan Synchrotron Radiation Research Institute (JASRI) |
7th Author's Name |
Yukako Kato |
7th Author's Affiliation |
Japan Synchrotron Radiation Research Institute (JASRI) |
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Speaker |
Author-1 |
Date Time |
2009-10-30 15:45:00 |
Presentation Time |
30 minutes |
Registration for |
SDM |
Paper # |
SDM2009-134 |
Volume (vol) |
vol.109 |
Number (no) |
no.257 |
Page |
pp.77-80 |
#Pages |
4 |
Date of Issue |
2009-10-22 (SDM) |