Paper Abstract and Keywords |
Presentation |
2009-10-29 16:45
Current Voltage Characteristics of Si-MESFET on SOI Substrate Toshiyuki Abe, Yuichiro Tanushi, Shin-Ichiro Kuroki, Koji Kotani, Takashi Ito (Tohoku Univ.) SDM2009-122 Link to ES Tech. Rep. Archives: SDM2009-122 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We simulate current-voltage characteristics of scaled Si metal semiconductor field effect transistors (MESFETs) and show gate leakage current reduction with new gate structure and drain leakage current reduction with double gate structure. Planar scaled MESFETs have large gate leakage current because of tunneling current between gate electrode and source-drain regions. We reduce the gate leakage current by MESFETs with the gate electrode higher than the source-drain electrodes. We also reduce the drain leakage current by overlap of depletion regions from the two gate electrodes of double gate structure. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
MESFET / Double Gate / Schottky Barrier / Metal Semiconductor Junction / Leakage Current / / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 257, SDM2009-122, pp. 27-30, Oct. 2009. |
Paper # |
SDM2009-122 |
Date of Issue |
2009-10-22 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2009-122 Link to ES Tech. Rep. Archives: SDM2009-122 |
Conference Information |
Committee |
SDM |
Conference Date |
2009-10-29 - 2009-10-30 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Tohoku University |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Semiconductor process science and new technology |
Paper Information |
Registration To |
SDM |
Conference Code |
2009-10-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Current Voltage Characteristics of Si-MESFET on SOI Substrate |
Sub Title (in English) |
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Keyword(1) |
MESFET |
Keyword(2) |
Double Gate |
Keyword(3) |
Schottky Barrier |
Keyword(4) |
Metal Semiconductor Junction |
Keyword(5) |
Leakage Current |
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Keyword(7) |
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1st Author's Name |
Toshiyuki Abe |
1st Author's Affiliation |
Tohoku University (Tohoku Univ.) |
2nd Author's Name |
Yuichiro Tanushi |
2nd Author's Affiliation |
Tohoku University (Tohoku Univ.) |
3rd Author's Name |
Shin-Ichiro Kuroki |
3rd Author's Affiliation |
Tohoku University (Tohoku Univ.) |
4th Author's Name |
Koji Kotani |
4th Author's Affiliation |
Tohoku University (Tohoku Univ.) |
5th Author's Name |
Takashi Ito |
5th Author's Affiliation |
Tohoku University (Tohoku Univ.) |
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Speaker |
Author-1 |
Date Time |
2009-10-29 16:45:00 |
Presentation Time |
30 minutes |
Registration for |
SDM |
Paper # |
SDM2009-122 |
Volume (vol) |
vol.109 |
Number (no) |
no.257 |
Page |
pp.27-30 |
#Pages |
4 |
Date of Issue |
2009-10-22 (SDM) |