Paper Abstract and Keywords |
Presentation |
2009-10-23 16:55
High-power RF InGaAs/InP p-i-n PD Shigetaka Itakura, Kiyohide Sakai, Eitaro Ishimura, Masaharu Nakaji, Toshitaka Aoyagi, Yoshihito Hirano (Mitsubishi Electric Corp.) OCS2009-80 OPE2009-146 LQE2009-105 Link to ES Tech. Rep. Archives: OPE2009-146 LQE2009-105 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We proposed a high-power RF InGaAs/InP p-i-n photodiode (PD) with a non-absorbing drift region for RF photonic links, and demonstrated a 3-dB bandwidth of 7 GHz, an RF power output of 29.0 dBm at 5 GHz, and a third order intercept point of 37 dBm at 5 GHz using a 70-um-diameter PD. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
photodetectors / photodiodes (PD) / p-i-n photodiodes / microwave photonics / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 245, LQE2009-105, pp. 191-195, Oct. 2009. |
Paper # |
LQE2009-105 |
Date of Issue |
2009-10-15 (OCS, OPE, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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OCS2009-80 OPE2009-146 LQE2009-105 Link to ES Tech. Rep. Archives: OPE2009-146 LQE2009-105 |
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