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| Presentation | 2009-10-09 10:25 [Invited Talk] Low cost technology of phase change memory with low-contact-resistivity poly-Si selection diode Yoshitaka Sasago, Masaharu Kinoshita, Takahiro Morikawa, Kenzo Kurotsuchi, Satoru Hanzawa, Toshiyuki Mine, Akio Shima, Yoshihisa Fujisaki, Hiroshi Moriya, Norikatsu Takaura, Kazuyoshi Torii (Hitachi)  MR2009-26 Link to ES Tech. Rep. Archives: MR2009-26 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We have fabricated the cross-point phase change memory with a selection diode made of poly-Si. The selection diode was fabricated using a low-thermal-budget process that achieved low contact resistivity, high on-current density of 8 MA/cm2 and low off-current density of 100 A/cm2. The improvement in the properties of poly-Si diode makes the set/reset operation of the cross-point 4F2 cell possible, leading to the size reduction of phase change memory chip. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | phase change memory / poly-Si diode / cross-point / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, Oct. 2009. | |
| Paper # | ||
| Date of Issue | 2009-10-01 (MR) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | MR2009-26 Link to ES Tech. Rep. Archives: MR2009-26 |
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| Conference Information | |
| Committee | ITE-MMS MRIS |
| Conference Date | 2009-10-08 - 2009-10-09 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | FUKUOKA traffic center |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | MRIS |
| Conference Code | 2009-10-MMS-MR |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low cost technology of phase change memory with low-contact-resistivity poly-Si selection diode |
| Sub Title (in English) | |
| Keyword(1) | phase change memory |
| Keyword(2) | poly-Si diode |
| Keyword(3) | cross-point |
| Keyword(4) | |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Yoshitaka Sasago |
| 1st Author's Affiliation | Hitachi, Ltd. (Hitachi) |
| 2nd Author's Name | Masaharu Kinoshita |
| 2nd Author's Affiliation | Hitachi, Ltd. (Hitachi) |
| 3rd Author's Name | Takahiro Morikawa |
| 3rd Author's Affiliation | Hitachi, Ltd. (Hitachi) |
| 4th Author's Name | Kenzo Kurotsuchi |
| 4th Author's Affiliation | Hitachi, Ltd. (Hitachi) |
| 5th Author's Name | Satoru Hanzawa |
| 5th Author's Affiliation | Hitachi, Ltd. (Hitachi) |
| 6th Author's Name | Toshiyuki Mine |
| 6th Author's Affiliation | Hitachi, Ltd. (Hitachi) |
| 7th Author's Name | Akio Shima |
| 7th Author's Affiliation | Hitachi, Ltd. (Hitachi) |
| 8th Author's Name | Yoshihisa Fujisaki |
| 8th Author's Affiliation | Hitachi, Ltd. (Hitachi) |
| 9th Author's Name | Hiroshi Moriya |
| 9th Author's Affiliation | Hitachi, Ltd. (Hitachi) |
| 10th Author's Name | Norikatsu Takaura |
| 10th Author's Affiliation | Hitachi, Ltd. (Hitachi) |
| 11th Author's Name | Kazuyoshi Torii |
| 11th Author's Affiliation | Hitachi, Ltd. (Hitachi) |
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| 12th Author's Affiliation | () |
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| 15th Author's Affiliation | () |
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| 17th Author's Affiliation | () |
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| 18th Author's Affiliation | () |
| Speaker | Author-1 |
| Date Time | 2009-10-09 10:25:00 |
| Presentation Time | 55 minutes |
| Registration for | MRIS |
| Paper # | MR2009-26 |
| Volume (vol) | vol.109 |
| Number (no) | no.222 |
| Page | pp.31-35 |
| #Pages | 5 |
| Date of Issue | 2009-10-01 (MR) |
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