Paper Abstract and Keywords |
Presentation |
2009-08-20 15:15
InAs QDs Wideband LED by Selective MOVPE Growth using Double-Cap Procedure Yusuke Suzuki, Fumihiro Kawashima, Yasuhito Saito, Kazuhiko Shimomura (Sophia Univ.) EMD2009-38 CPM2009-62 OPE2009-86 LQE2009-45 Link to ES Tech. Rep. Archives: EMD2009-38 CPM2009-62 OPE2009-86 LQE2009-45 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Semiconductor self-assembled quantum dots (QDs) that have zero-dimensional carrier confinement structure are predicted to have unique physical properties. And these QDs are expected to increase the performance of various semiconductor optical devices such as laser or LED. By using the semiconductor quantum well structure, only one dimension of the height can be controlled the quantum energy level, on the other hand, in the QDs structure, the three-dimensional control of the energy level is possible, and we can obtain the more wide wavelength control. For this reason, The wide wavelength emission source can be applied, such as very wideband wavelength division multiplex (WDM) system, including the 1.55 μm optical telecommunication wavelength, the environmental gas detecting in the longer wavelength near the 2.0 μm,and the light source for optical coherence tomography. In this study, we show the wideband wavelength electro luminescence (EL) more than 400 nm of quantum dot LED using selective MOVPE growth and double-cap procedure. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Metal-organic vapor phase epitaxy (MOVPE) / Quantum Dots (QDs) / selective area growth / double-cap procedure / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 175, OPE2009-86, pp. 63-68, Aug. 2009. |
Paper # |
OPE2009-86 |
Date of Issue |
2009-08-13 (EMD, CPM, OPE, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
EMD2009-38 CPM2009-62 OPE2009-86 LQE2009-45 Link to ES Tech. Rep. Archives: EMD2009-38 CPM2009-62 OPE2009-86 LQE2009-45 |
Conference Information |
Committee |
OPE EMD CPM LQE |
Conference Date |
2009-08-20 - 2009-08-21 |
Place (in Japanese) |
(See Japanese page) |
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Paper Information |
Registration To |
OPE |
Conference Code |
2009-08-OPE-EMD-CPM-LQE |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
InAs QDs Wideband LED by Selective MOVPE Growth using Double-Cap Procedure |
Sub Title (in English) |
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Keyword(1) |
Metal-organic vapor phase epitaxy (MOVPE) |
Keyword(2) |
Quantum Dots (QDs) |
Keyword(3) |
selective area growth |
Keyword(4) |
double-cap procedure |
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1st Author's Name |
Yusuke Suzuki |
1st Author's Affiliation |
Sophia University (Sophia Univ.) |
2nd Author's Name |
Fumihiro Kawashima |
2nd Author's Affiliation |
Sophia University (Sophia Univ.) |
3rd Author's Name |
Yasuhito Saito |
3rd Author's Affiliation |
Sophia University (Sophia Univ.) |
4th Author's Name |
Kazuhiko Shimomura |
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Sophia University (Sophia Univ.) |
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Speaker |
Author-1 |
Date Time |
2009-08-20 15:15:00 |
Presentation Time |
25 minutes |
Registration for |
OPE |
Paper # |
EMD2009-38, CPM2009-62, OPE2009-86, LQE2009-45 |
Volume (vol) |
vol.109 |
Number (no) |
no.173(EMD), no.174(CPM), no.175(OPE), no.176(LQE) |
Page |
pp.63-68 |
#Pages |
6 |
Date of Issue |
2009-08-13 (EMD, CPM, OPE, LQE) |
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