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| Presentation | 2009-08-11 11:40 Epitaxial growth of gallium nitride on Si by hot-mesh CVD method with intermittent gas supplies. Takeshi Saitou, Kazuki Nagata (Nagaoka Univ. of Tech.), Maki Suemitsu, Tetsuo Endoh (RIEC Tohoku Univ.), Takashi Ito (CIR Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.), Yuzuru Narita (Yamagata Univ.), Masasuke Takata, Tadashi Akahane, Kanji Yasui (Nagaoka Univ. of Tech.)  CPM2009-45 Link to ES Tech. Rep. Archives: CPM2009-45 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Hot-mesh CVD with various gas supply modes for the epitaxial growth of gallium nitride (GaN) on Si was investigated for the improvement of its crystallinity and optical properties. The optimal interruption time in an intermittent TMG gas supply was also investigated. As a result, the good crystallinity of GaN films was obtained by an intermittent gas supply of TMG and a continuous supply of NH3 gas. The best crystallinity was obtained at an interruption time of 8 s. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN / AlN / Intermittent supply / Ru / W-mesh / Hot-mesh CVD / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 171, CPM2009-45, pp. 61-66, Aug. 2009. | |
| Paper # | CPM2009-45 | |
| Date of Issue | 2009-08-03 (CPM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | CPM2009-45 Link to ES Tech. Rep. Archives: CPM2009-45 |
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| Conference Information | |
| Committee | CPM |
| Conference Date | 2009-08-10 - 2009-08-11 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hirosaki Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Electronic Component Parts and Materials, etc. |
| Paper Information | |
| Registration To | CPM |
| Conference Code | 2009-08-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Epitaxial growth of gallium nitride on Si by hot-mesh CVD method with intermittent gas supplies. |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | AlN |
| Keyword(3) | Intermittent supply |
| Keyword(4) | Ru |
| Keyword(5) | W-mesh |
| Keyword(6) | Hot-mesh CVD |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Takeshi Saitou |
| 1st Author's Affiliation | Nagaoka University of Technology (Nagaoka Univ. of Tech.) |
| 2nd Author's Name | Kazuki Nagata |
| 2nd Author's Affiliation | Nagaoka University of Technology (Nagaoka Univ. of Tech.) |
| 3rd Author's Name | Maki Suemitsu |
| 3rd Author's Affiliation | Research Institute of Electrical Communication, Tohoku University (RIEC Tohoku Univ.) |
| 4th Author's Name | Tetsuo Endoh |
| 4th Author's Affiliation | Research Institute of Electrical Communication, Tohoku University (RIEC Tohoku Univ.) |
| 5th Author's Name | Takashi Ito |
| 5th Author's Affiliation | Center of Interdisciplinary Research, Tohoku University (CIR Tohoku Univ.) |
| 6th Author's Name | Hideki Nakazawa |
| 6th Author's Affiliation | Faculty of Science & Technology, Hirosaki University (Hirosaki Univ.) |
| 7th Author's Name | Yuzuru Narita |
| 7th Author's Affiliation | Yamagata University (Yamagata Univ.) |
| 8th Author's Name | Masasuke Takata |
| 8th Author's Affiliation | Nagaoka University of Technology (Nagaoka Univ. of Tech.) |
| 9th Author's Name | Tadashi Akahane |
| 9th Author's Affiliation | Nagaoka University of Technology (Nagaoka Univ. of Tech.) |
| 10th Author's Name | Kanji Yasui |
| 10th Author's Affiliation | Nagaoka University of Technology (Nagaoka Univ. of Tech.) |
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| Speaker | Author-10 |
| Date Time | 2009-08-11 11:40:00 |
| Presentation Time | 25 minutes |
| Registration for | CPM |
| Paper # | CPM2009-45 |
| Volume (vol) | vol.109 |
| Number (no) | no.171 |
| Page | pp.61-66 |
| #Pages | 6 |
| Date of Issue | 2009-08-03 (CPM) |
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