Paper Abstract and Keywords |
Presentation |
2009-08-10 15:05
Evaluation of Hydrogen Desorption Barrier from Si(100) Surface using Temperature-Pprogrammed Desorption and Isothermal Desorption Yuzuru Narita (Yamagata Univ.), Goro Yasutomi, Chie Unoko, Shoji Inanaga, Akira Namiki (Kyushu Inst. of Tech.) CPM2009-34 Link to ES Tech. Rep. Archives: CPM2009-34 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have investigated desorption kinetics of deutrium from a Si(100) surface
using temperature-programmed desorption (TPD) and isothermal
desorption methods.
From semi-logarithmic plots of TPD spectra, it is found that three desorption components, denoted as $\beta_{1,\rm{A}}$, $\beta_{1,\rm{B}}$, and C, can be distinguished.
The maximum of the $\beta_{1,\rm{A}}$ peak is nearly constant at around the maximum temperature of the TPD peak.
On the orther hand, the $\beta_{1,\rm{B}}$ peak systematically shifts to higher temperatures with decreasing $\theta_{\rm D}^{0}$.
These results imply that first- and second-order kinetics are operating for the $\beta_{1,\rm{A}}$ and $\beta_{1,\rm{B}}$ desorptions, respectively.
From the analysis of isothermal desorption curves, the desorption barriers for the $\beta_{1,\rm{A}}$ and $\beta_{1,\rm{B}}$ desorptions are evaluated to be 1.6$\pm$0.1 eV and 1.8$\pm$0.1 eV, respectively. These values are substantially lower than the widely accepted value of 2.5 eV.
The desorption mechanisms for the $\beta_{1,\rm{A}}$, $\beta_{1,\rm{B}}$ and C channels are discussed based on an inter-dimer model. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Hydrogen / Si(100) surface / Temperature-programmed desorption / Isothermal desorption / Desorption barrier / / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 171, CPM2009-34, pp. 5-8, Aug. 2009. |
Paper # |
CPM2009-34 |
Date of Issue |
2009-08-03 (CPM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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CPM2009-34 Link to ES Tech. Rep. Archives: CPM2009-34 |
Conference Information |
Committee |
CPM |
Conference Date |
2009-08-10 - 2009-08-11 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Hirosaki Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Electronic Component Parts and Materials, etc. |
Paper Information |
Registration To |
CPM |
Conference Code |
2009-08-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Evaluation of Hydrogen Desorption Barrier from Si(100) Surface using Temperature-Pprogrammed Desorption and Isothermal Desorption |
Sub Title (in English) |
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Keyword(1) |
Hydrogen |
Keyword(2) |
Si(100) surface |
Keyword(3) |
Temperature-programmed desorption |
Keyword(4) |
Isothermal desorption |
Keyword(5) |
Desorption barrier |
Keyword(6) |
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Keyword(7) |
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Keyword(8) |
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1st Author's Name |
Yuzuru Narita |
1st Author's Affiliation |
Yamagata University (Yamagata Univ.) |
2nd Author's Name |
Goro Yasutomi |
2nd Author's Affiliation |
Kyushu Institute of Technology (Kyushu Inst. of Tech.) |
3rd Author's Name |
Chie Unoko |
3rd Author's Affiliation |
Kyushu Institute of Technology (Kyushu Inst. of Tech.) |
4th Author's Name |
Shoji Inanaga |
4th Author's Affiliation |
Kyushu Institute of Technology (Kyushu Inst. of Tech.) |
5th Author's Name |
Akira Namiki |
5th Author's Affiliation |
Kyushu Institute of Technology (Kyushu Inst. of Tech.) |
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Speaker |
Author-1 |
Date Time |
2009-08-10 15:05:00 |
Presentation Time |
25 minutes |
Registration for |
CPM |
Paper # |
CPM2009-34 |
Volume (vol) |
vol.109 |
Number (no) |
no.171 |
Page |
pp.5-8 |
#Pages |
4 |
Date of Issue |
2009-08-03 (CPM) |
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