Paper Abstract and Keywords |
Presentation |
2009-07-21 15:15
Fabrication of NbN Josephson Junctions with Plasma-Nitrided AlN barrier Yuki Nagai, Naoto Naito, Hiroyuki Akaike, Akira Fujimaki (Nagoya Univ.) SCE2009-14 Link to ES Tech. Rep. Archives: SCE2009-14 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We present the preparation process of plasma-nitrided AlNx barriers for NbN Josephson junctions and the electrical characteristics of the junctions. The plasma-nitided AlNx barrier will be used as an ultra-thin and homogeneous barrier layer which is needed to enhance the quality of NbN/AlN/NbNx/NbN junctions. In this work, we have investigated the relationship between the preparation conditions of plasma-nitrided AlNx barriers and the electrical characteristics of NbN/AlNx/NbN junctions. By adjusting the Al thickness and nitriding time, junctions showed underdamped current-voltage characteristics with low leakage current. The quality parameter Vm was 40 mV in the junction with Jc = 3.3 kA/cm2, and the junction resistance RnA and Jc were 40~1500 Ωμm2 and ~7 kA/cm2, respectively. Evaluation of the spread in Ic showed that the minimum to maximum Ic spread was about ±3 % in series of 100 junctions with an area of 100 μm2. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Plasma-Nitridation / AlN / NbN / Josephson junction / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 141, SCE2009-14, pp. 29-33, July 2009. |
Paper # |
SCE2009-14 |
Date of Issue |
2009-07-14 (SCE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SCE2009-14 Link to ES Tech. Rep. Archives: SCE2009-14 |
Conference Information |
Committee |
SCE |
Conference Date |
2009-07-21 - 2009-07-21 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Junctions and materials, etc. |
Paper Information |
Registration To |
SCE |
Conference Code |
2009-07-SCE |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Fabrication of NbN Josephson Junctions with Plasma-Nitrided AlN barrier |
Sub Title (in English) |
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Keyword(1) |
Plasma-Nitridation |
Keyword(2) |
AlN |
Keyword(3) |
NbN |
Keyword(4) |
Josephson junction |
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1st Author's Name |
Yuki Nagai |
1st Author's Affiliation |
Nagoya University (Nagoya Univ.) |
2nd Author's Name |
Naoto Naito |
2nd Author's Affiliation |
Nagoya University (Nagoya Univ.) |
3rd Author's Name |
Hiroyuki Akaike |
3rd Author's Affiliation |
Nagoya University (Nagoya Univ.) |
4th Author's Name |
Akira Fujimaki |
4th Author's Affiliation |
Nagoya University (Nagoya Univ.) |
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Speaker |
Author-1 |
Date Time |
2009-07-21 15:15:00 |
Presentation Time |
25 minutes |
Registration for |
SCE |
Paper # |
SCE2009-14 |
Volume (vol) |
vol.109 |
Number (no) |
no.141 |
Page |
pp.29-33 |
#Pages |
5 |
Date of Issue |
2009-07-14 (SCE) |
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