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| Presentation | 2009-07-17 15:30 [Invited Talk] Development of Graphene Devices and their Future Taiichi Otsuji (Tohoku Univ.)  SDM2009-116 ICD2009-32 Link to ES Tech. Rep. Archives: SDM2009-116 ICD2009-32 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | This paper reviews recent advances in our original graphene material epitaxially grown on Si substrate and its applications to electron and optoelectronic devices. Exfoliation from highly-oriented pyrolitic graphite and surface decomposition of epitaxial SiC are well-known as graphene formation technologies. However, when it is introduced to the post-CMOS VLSIs as the key material, introduction of Si substrate as the starting material as well as practically low-temperature, reproducible growth technology is mandatory. To cope with those issues “graphene-on-silicon” material growth technology consisting of epitaxial growth of 3C-SiC onto Si substrate using organo-silan gas-source MBE and surface decomposition processes has been developed. By utilizing such a new GOS material to form the channel with graphene, normal transistor operation has been confirmed with an excellent mobility. This is the first step ahead; we have recognized existing subjects for ultra-high quality, mass-productive device fabrication. The exceptional electronic properties of graphene can devise wide variety of new devices including plasmonic devices and terahertz lasers which will also be described. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | graphene / epitaxial growth / silicon / transistor / FET / terahertz / laser / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 133, SDM2009-116, pp. 101-106, July 2009. | |
| Paper # | SDM2009-116 | |
| Date of Issue | 2009-07-09 (SDM, ICD) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2009-116 ICD2009-32 Link to ES Tech. Rep. Archives: SDM2009-116 ICD2009-32 |
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| Conference Information | |
| Committee | ICD SDM |
| Conference Date | 2009-07-16 - 2009-07-17 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Tokyo Institute of Technology |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Low voltage/low power techniques, novel devices, circuits, and applications |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2009-07-ICD-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Development of Graphene Devices and their Future |
| Sub Title (in English) | |
| Keyword(1) | graphene |
| Keyword(2) | epitaxial growth |
| Keyword(3) | silicon |
| Keyword(4) | transistor |
| Keyword(5) | FET |
| Keyword(6) | terahertz |
| Keyword(7) | laser |
| Keyword(8) | |
| 1st Author's Name | Taiichi Otsuji |
| 1st Author's Affiliation | Tohoku University (Tohoku Univ.) |
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| Speaker | Author-1 |
| Date Time | 2009-07-17 15:30:00 |
| Presentation Time | 45 minutes |
| Registration for | SDM |
| Paper # | SDM2009-116, ICD2009-32 |
| Volume (vol) | vol.109 |
| Number (no) | no.133(SDM), no.134(ICD) |
| Page | pp.101-106 |
| #Pages | 6 |
| Date of Issue | 2009-07-09 (SDM, ICD) |
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