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Paper Abstract and Keywords
Presentation 2009-07-17 12:00
Cross-Point phase change memory with 4F2 cell size driven by low-contact resistivity poly-si diode
Yoshitaka Sasago, Masaharu Kinoshita, Takahiro Morikawa, Kenzo Kurotsuchi, Satoru Hanzawa, Toshiyuki Mine, Akio Shima, Yoshihisa Fujisaki, Hitoshi Kume, Hiroshi Moriya, Norikatsu Takaura, Kazuyoshi Torii (Hitachi) SDM2009-112 ICD2009-28 Link to ES Tech. Rep. Archives: SDM2009-112 ICD2009-28
Abstract (in Japanese) (See Japanese page) 
(in English) We have fabricated the cross-point phase change memory with a selection diode made of poly-Si. The selection diode was fabricated using a low-thermal-budget process that achieved low contact resistivity, high on-current density of 8 MA/cm2 and low off-current density of 100 A/cm2. The improvement in the properties of poly-Si diode makes the set/reset operation of the cross-point 4F2 cell possible, leading to the size reduction of phase change memory chip.
Keyword (in Japanese) (See Japanese page) 
(in English) phase change memory / poly-Si diode / cross-point / / / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 133, SDM2009-112, pp. 79-83, July 2009.
Paper # SDM2009-112 
Date of Issue 2009-07-09 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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技術研究報告に掲載された論文の著作権はIEICEに帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2009-112 ICD2009-28 Link to ES Tech. Rep. Archives: SDM2009-112 ICD2009-28

Conference Information
Committee ICD SDM  
Conference Date 2009-07-16 - 2009-07-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Tokyo Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Low voltage/low power techniques, novel devices, circuits, and applications 
Paper Information
Registration To SDM 
Conference Code 2009-07-ICD-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Cross-Point phase change memory with 4F2 cell size driven by low-contact resistivity poly-si diode 
Sub Title (in English)  
Keyword(1) phase change memory  
Keyword(2) poly-Si diode  
Keyword(3) cross-point  
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Keyword(8)  
1st Author's Name Yoshitaka Sasago  
1st Author's Affiliation Hitachi, Ltd. (Hitachi)
2nd Author's Name Masaharu Kinoshita  
2nd Author's Affiliation Hitachi, Ltd. (Hitachi)
3rd Author's Name Takahiro Morikawa  
3rd Author's Affiliation Hitachi, Ltd. (Hitachi)
4th Author's Name Kenzo Kurotsuchi  
4th Author's Affiliation Hitachi, Ltd. (Hitachi)
5th Author's Name Satoru Hanzawa  
5th Author's Affiliation Hitachi, Ltd. (Hitachi)
6th Author's Name Toshiyuki Mine  
6th Author's Affiliation Hitachi, Ltd. (Hitachi)
7th Author's Name Akio Shima  
7th Author's Affiliation Hitachi, Ltd. (Hitachi)
8th Author's Name Yoshihisa Fujisaki  
8th Author's Affiliation Hitachi, Ltd. (Hitachi)
9th Author's Name Hitoshi Kume  
9th Author's Affiliation Hitachi, Ltd. (Hitachi)
10th Author's Name Hiroshi Moriya  
10th Author's Affiliation Hitachi, Ltd. (Hitachi)
11th Author's Name Norikatsu Takaura  
11th Author's Affiliation Hitachi, Ltd. (Hitachi)
12th Author's Name Kazuyoshi Torii  
12th Author's Affiliation Hitachi, Ltd. (Hitachi)
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Speaker
Date Time 2009-07-17 12:00:00 
Presentation Time 25 
Registration for SDM 
Paper # IEICE-SDM2009-112,IEICE-ICD2009-28 
Volume (vol) IEICE-109 
Number (no) no.133(SDM), no.134(ICD) 
Page pp.79-83 
#Pages IEICE-5 
Date of Issue IEICE-SDM-2009-07-09,IEICE-ICD-2009-07-09 


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