Paper Abstract and Keywords |
Presentation |
2009-07-16 14:25
Ferroelectric(Fe)-NAND Flash Memory with Non-volatile Page Buffer for Data Center Application Enterprise Solid-State Drives (SSD) Ryoji Yajima, Teruyoshi Hatanaka (Univ. of Tokyo), Mitsue Takahashi, Shigeki Sakai (AIST), Ken Takeuchi (Univ. of Tokyo) SDM2009-104 ICD2009-20 Link to ES Tech. Rep. Archives: SDM2009-104 ICD2009-20 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
A ferroelectric (Fe)-NAND flash memory with a non-volatile (NV) page buffer is proposed. The data fragmentation in a random write is removed by introducing a batch write algorithm. As a result, the SSD performance can double. The NV-page buffer realizes a power outage immune highly reliable operation. With a low program/erase voltage, 6V and a high endurance, 100million cycles, the proposed Fe-NAND is most suitable for a highly reliable high-speed low power data center application enterprise SSD. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
SSD / NAND / FLASH / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 134, ICD2009-20, pp. 39-44, July 2009. |
Paper # |
ICD2009-20 |
Date of Issue |
2009-07-09 (SDM, ICD) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2009-104 ICD2009-20 Link to ES Tech. Rep. Archives: SDM2009-104 ICD2009-20 |
Conference Information |
Committee |
ICD SDM |
Conference Date |
2009-07-16 - 2009-07-17 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Tokyo Institute of Technology |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Low voltage/low power techniques, novel devices, circuits, and applications |
Paper Information |
Registration To |
ICD |
Conference Code |
2009-07-ICD-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Ferroelectric(Fe)-NAND Flash Memory with Non-volatile Page Buffer for Data Center Application Enterprise Solid-State Drives (SSD) |
Sub Title (in English) |
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SSD |
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NAND |
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FLASH |
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1st Author's Name |
Ryoji Yajima |
1st Author's Affiliation |
The University of Tokyo (Univ. of Tokyo) |
2nd Author's Name |
Teruyoshi Hatanaka |
2nd Author's Affiliation |
The University of Tokyo (Univ. of Tokyo) |
3rd Author's Name |
Mitsue Takahashi |
3rd Author's Affiliation |
National institute of advanced industrial science and technology (AIST) |
4th Author's Name |
Shigeki Sakai |
4th Author's Affiliation |
National institute of advanced industrial science and technology (AIST) |
5th Author's Name |
Ken Takeuchi |
5th Author's Affiliation |
The University of Tokyo (Univ. of Tokyo) |
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Speaker |
Author-1 |
Date Time |
2009-07-16 14:25:00 |
Presentation Time |
25 minutes |
Registration for |
ICD |
Paper # |
SDM2009-104, ICD2009-20 |
Volume (vol) |
vol.109 |
Number (no) |
no.133(SDM), no.134(ICD) |
Page |
pp.39-44 |
#Pages |
6 |
Date of Issue |
2009-07-09 (SDM, ICD) |
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