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Paper Abstract and Keywords
Presentation 2009-07-16 14:25
Ferroelectric(Fe)-NAND Flash Memory with Non-volatile Page Buffer for Data Center Application Enterprise Solid-State Drives (SSD)
Ryoji Yajima, Teruyoshi Hatanaka (Univ. of Tokyo), Mitsue Takahashi, Shigeki Sakai (AIST), Ken Takeuchi (Univ. of Tokyo) SDM2009-104 ICD2009-20 Link to ES Tech. Rep. Archives: SDM2009-104 ICD2009-20
Abstract (in Japanese) (See Japanese page) 
(in English) A ferroelectric (Fe)-NAND flash memory with a non-volatile (NV) page buffer is proposed. The data fragmentation in a random write is removed by introducing a batch write algorithm. As a result, the SSD performance can double. The NV-page buffer realizes a power outage immune highly reliable operation. With a low program/erase voltage, 6V and a high endurance, 100million cycles, the proposed Fe-NAND is most suitable for a highly reliable high-speed low power data center application enterprise SSD.
Keyword (in Japanese) (See Japanese page) 
(in English) SSD / NAND / FLASH / / / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 134, ICD2009-20, pp. 39-44, July 2009.
Paper # ICD2009-20 
Date of Issue 2009-07-09 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2009-104 ICD2009-20 Link to ES Tech. Rep. Archives: SDM2009-104 ICD2009-20

Conference Information
Committee ICD SDM  
Conference Date 2009-07-16 - 2009-07-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Tokyo Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Low voltage/low power techniques, novel devices, circuits, and applications 
Paper Information
Registration To ICD 
Conference Code 2009-07-ICD-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Ferroelectric(Fe)-NAND Flash Memory with Non-volatile Page Buffer for Data Center Application Enterprise Solid-State Drives (SSD) 
Sub Title (in English)  
Keyword(1) SSD  
Keyword(2) NAND  
Keyword(3) FLASH  
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1st Author's Name Ryoji Yajima  
1st Author's Affiliation The University of Tokyo (Univ. of Tokyo)
2nd Author's Name Teruyoshi Hatanaka  
2nd Author's Affiliation The University of Tokyo (Univ. of Tokyo)
3rd Author's Name Mitsue Takahashi  
3rd Author's Affiliation National institute of advanced industrial science and technology (AIST)
4th Author's Name Shigeki Sakai  
4th Author's Affiliation National institute of advanced industrial science and technology (AIST)
5th Author's Name Ken Takeuchi  
5th Author's Affiliation The University of Tokyo (Univ. of Tokyo)
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Date Time 2009-07-16 14:25:00 
Presentation Time 25 minutes 
Registration for ICD 
Paper # SDM2009-104, ICD2009-20 
Volume (vol) vol.109 
Number (no) no.133(SDM), no.134(ICD) 
Page pp.39-44 
#Pages
Date of Issue 2009-07-09 (SDM, ICD) 


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