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| Presentation | 2009-06-26 11:45 Study on Dependence of Self-Boosting Channel Potential on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Device. Seongjae Cho, Jung Hoon Lee, Yun Kim, Jang-Gn Yun, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.)  ED2009-101 SDM2009-96 Link to ES Tech. Rep. Archives: ED2009-101 SDM2009-96 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | (Not available yet) | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | / / / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 98, SDM2009-96, pp. 219-222, June 2009. | |
| Paper # | SDM2009-96 | |
| Date of Issue | 2009-06-17 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2009-101 SDM2009-96 Link to ES Tech. Rep. Archives: ED2009-101 SDM2009-96 |
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| Conference Information | |
| Committee | SDM ED |
| Conference Date | 2009-06-24 - 2009-06-26 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Haeundae Grand Hotel, Busan, Korea |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2009-06-SDM-ED |
| Language | English |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study on Dependence of Self-Boosting Channel Potential on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Device. |
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| 1st Author's Name | Seongjae Cho |
| 1st Author's Affiliation | School of Electrical Engineering and Computer Science, Seoul National University (Seoul National Univ.) |
| 2nd Author's Name | Jung Hoon Lee |
| 2nd Author's Affiliation | School of Electrical Engineering and Computer Science, Seoul National University (Seoul National Univ.) |
| 3rd Author's Name | Yun Kim |
| 3rd Author's Affiliation | School of Electrical Engineering and Computer Science, Seoul National University (Seoul National Univ.) |
| 4th Author's Name | Jang-Gn Yun |
| 4th Author's Affiliation | School of Electrical Engineering and Computer Science, Seoul National University (Seoul National Univ.) |
| 5th Author's Name | Hyungcheol Shin |
| 5th Author's Affiliation | School of Electrical Engineering and Computer Science, Seoul National University (Seoul National Univ.) |
| 6th Author's Name | Byung-Gook Park |
| 6th Author's Affiliation | School of Electrical Engineering and Computer Science, Seoul National University (Seoul National Univ.) |
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| Speaker | Author-1 |
| Date Time | 2009-06-26 11:45:00 |
| Presentation Time | 15 minutes |
| Registration for | SDM |
| Paper # | ED2009-101, SDM2009-96 |
| Volume (vol) | vol.109 |
| Number (no) | no.97(ED), no.98(SDM) |
| Page | pp.219-222 |
| #Pages | 4 |
| Date of Issue | 2009-06-17 (ED, SDM) |
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