IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2009-06-25 09:00
[Invited Talk] InAlGaN/AlGaN/GaN Heterosturcures Field Effect Transistors with Flat Surface and High Electron Mobility
Masanobu Hiroki, Narihiko Maeda, Takashi Kobayashi, Naoteru Shigekawa (NTT PH Labs.) ED2009-71 SDM2009-66 Link to ES Tech. Rep. Archives: ED2009-71 SDM2009-66
Abstract (in Japanese) (See Japanese page) 
(in English) We report our recent development of an InAlN barrier layer for GaN-based FETs. We fabricated a novel structure consisting of InAlN/AlGaN/GaN. With this structure, we achieved higher electron mobility and a flatter surface than those for the conventional InAlN/GaN heterostructures. We investigated the AlN interlayer thickness dependence of mobility and surface flatness. The thickness strongly affected the mobility and the surface roughness of InAlN/GaN. In contrast, the variation of these values is suppressed for the new structure. We achieved low sheet resistance even for the new structure without an AlN interlayer. These results point to the possibility of developing GaN-based FETs with high performance and high reliability.
Keyword (in Japanese) (See Japanese page) 
(in English) InAlN / AlInN / HEMT / FET / GaN / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 97, ED2009-71, pp. 93-98, June 2009.
Paper # ED2009-71 
Date of Issue 2009-06-17 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2009-71 SDM2009-66 Link to ES Tech. Rep. Archives: ED2009-71 SDM2009-66

Conference Information
Committee SDM ED  
Conference Date 2009-06-24 - 2009-06-26 
Place (in Japanese) (See Japanese page) 
Place (in English) Haeundae Grand Hotel, Busan, Korea 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To ED 
Conference Code 2009-06-SDM-ED 
Language English (Japanese title is available) 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) InAlGaN/AlGaN/GaN Heterosturcures Field Effect Transistors with Flat Surface and High Electron Mobility 
Sub Title (in English)  
Keyword(1) InAlN  
Keyword(2) AlInN  
Keyword(3) HEMT  
Keyword(4) FET  
Keyword(5) GaN  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Masanobu Hiroki  
1st Author's Affiliation NTT Photonics Laboratories (NTT PH Labs.)
2nd Author's Name Narihiko Maeda  
2nd Author's Affiliation NTT Photonics Laboratories (NTT PH Labs.)
3rd Author's Name Takashi Kobayashi  
3rd Author's Affiliation NTT Photonics Laboratories (NTT PH Labs.)
4th Author's Name Naoteru Shigekawa  
4th Author's Affiliation NTT Photonics Laboratories (NTT PH Labs.)
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker Author-1 
Date Time 2009-06-25 09:00:00 
Presentation Time 30 minutes 
Registration for ED 
Paper # ED2009-71, SDM2009-66 
Volume (vol) vol.109 
Number (no) no.97(ED), no.98(SDM) 
Page pp.93-98 
#Pages
Date of Issue 2009-06-17 (ED, SDM) 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan