Paper Abstract and Keywords |
Presentation |
2009-06-25 09:00
[Invited Talk]
InAlGaN/AlGaN/GaN Heterosturcures Field Effect Transistors with Flat Surface and High Electron Mobility Masanobu Hiroki, Narihiko Maeda, Takashi Kobayashi, Naoteru Shigekawa (NTT PH Labs.) ED2009-71 SDM2009-66 Link to ES Tech. Rep. Archives: ED2009-71 SDM2009-66 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We report our recent development of an InAlN barrier layer for GaN-based FETs. We fabricated a novel structure consisting of InAlN/AlGaN/GaN. With this structure, we achieved higher electron mobility and a flatter surface than those for the conventional InAlN/GaN heterostructures. We investigated the AlN interlayer thickness dependence of mobility and surface flatness. The thickness strongly affected the mobility and the surface roughness of InAlN/GaN. In contrast, the variation of these values is suppressed for the new structure. We achieved low sheet resistance even for the new structure without an AlN interlayer. These results point to the possibility of developing GaN-based FETs with high performance and high reliability. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
InAlN / AlInN / HEMT / FET / GaN / / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 97, ED2009-71, pp. 93-98, June 2009. |
Paper # |
ED2009-71 |
Date of Issue |
2009-06-17 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2009-71 SDM2009-66 Link to ES Tech. Rep. Archives: ED2009-71 SDM2009-66 |
Conference Information |
Committee |
SDM ED |
Conference Date |
2009-06-24 - 2009-06-26 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Haeundae Grand Hotel, Busan, Korea |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
Paper Information |
Registration To |
ED |
Conference Code |
2009-06-SDM-ED |
Language |
English (Japanese title is available) |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
InAlGaN/AlGaN/GaN Heterosturcures Field Effect Transistors with Flat Surface and High Electron Mobility |
Sub Title (in English) |
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Keyword(1) |
InAlN |
Keyword(2) |
AlInN |
Keyword(3) |
HEMT |
Keyword(4) |
FET |
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GaN |
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1st Author's Name |
Masanobu Hiroki |
1st Author's Affiliation |
NTT Photonics Laboratories (NTT PH Labs.) |
2nd Author's Name |
Narihiko Maeda |
2nd Author's Affiliation |
NTT Photonics Laboratories (NTT PH Labs.) |
3rd Author's Name |
Takashi Kobayashi |
3rd Author's Affiliation |
NTT Photonics Laboratories (NTT PH Labs.) |
4th Author's Name |
Naoteru Shigekawa |
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NTT Photonics Laboratories (NTT PH Labs.) |
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Speaker |
Author-1 |
Date Time |
2009-06-25 09:00:00 |
Presentation Time |
30 minutes |
Registration for |
ED |
Paper # |
ED2009-71, SDM2009-66 |
Volume (vol) |
vol.109 |
Number (no) |
no.97(ED), no.98(SDM) |
Page |
pp.93-98 |
#Pages |
6 |
Date of Issue |
2009-06-17 (ED, SDM) |
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