Paper Abstract and Keywords |
Presentation |
2009-06-25 12:45
Study on Quantum Electro-Dynamics in Vertical MOSFET Masakazu Muraguchi, Tetsuo Endoh (Tohoku Univ./JST-CREST) ED2009-89 SDM2009-84 Link to ES Tech. Rep. Archives: ED2009-89 SDM2009-84 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have studied transmission property of electron in vertical MOSFET (V-MOSFET) from the viewpoint of quantum electro-dynamics. To obtain the intuitive picture of electron transmission property through channel of the V-MOSFET, we solve the time-dependent Shrödinger equation in real space by employing the split operator method. We injected an electron wave packet into the body of the V-MOSFET from the source, and traced the time-development of electron-wave function in the body and drain region. We successfully showed that the electron wave function propagates through the resonant states of the body potential. Our suggested approaches open the quantative and intuitive discussion for the carrier dynamics in the V-MOSFET on quantum limit. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Vertical MOSFET / Quantum Electro-Dynamics / Resonant Tunneling / Electron Transport / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 98, SDM2009-84, pp. 169-172, June 2009. |
Paper # |
SDM2009-84 |
Date of Issue |
2009-06-17 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2009-89 SDM2009-84 Link to ES Tech. Rep. Archives: ED2009-89 SDM2009-84 |
Conference Information |
Committee |
SDM ED |
Conference Date |
2009-06-24 - 2009-06-26 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Haeundae Grand Hotel, Busan, Korea |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2009-06-SDM-ED |
Language |
English |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Study on Quantum Electro-Dynamics in Vertical MOSFET |
Sub Title (in English) |
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Keyword(1) |
Vertical MOSFET |
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Quantum Electro-Dynamics |
Keyword(3) |
Resonant Tunneling |
Keyword(4) |
Electron Transport |
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1st Author's Name |
Masakazu Muraguchi |
1st Author's Affiliation |
Tohoku University/JST-CREST (Tohoku Univ./JST-CREST) |
2nd Author's Name |
Tetsuo Endoh |
2nd Author's Affiliation |
Tohoku University/JST-CREST (Tohoku Univ./JST-CREST) |
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Speaker |
Author-1 |
Date Time |
2009-06-25 12:45:00 |
Presentation Time |
15 minutes |
Registration for |
SDM |
Paper # |
ED2009-89, SDM2009-84 |
Volume (vol) |
vol.109 |
Number (no) |
no.97(ED), no.98(SDM) |
Page |
pp.169-172 |
#Pages |
4 |
Date of Issue |
2009-06-17 (ED, SDM) |
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