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| Presentation | 2009-06-25 09:30 [Invited Talk] MOS Transistors fabricated on Si(551) surface based on radical reaction processes Akinobu Teramoto, Weitao Cheng, Chingfoa Tye, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)  ED2009-84 SDM2009-79 Link to ES Tech. Rep. Archives: ED2009-84 SDM2009-79 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Though the electron mobility in the channel of MOSFET on Si(100) surface which is currently used for LSI devices is largest of all, the hole mobility is smallest. We have reported that the high quality gate insulator films can be formed on any oriented silicon surfaces by using radical oxidation and radical nitridation. Then, We can use Si(551) surface for fabricating the LSI devices. Si(551) is a surface orientation where 8°off from the Si(110) in [001] direction and is hard to be roughened by alkali solutions. The hole mobility in Si(551) surface is large as Si(100). We demonstrate the high performance CMOS by fabricating accumulation mode MOSFETs on Si(551) surface. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Silicon / surface orientation / MOSFET / mobility / SOI / accumulation mode / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 98, SDM2009-79, pp. 149-152, June 2009. | |
| Paper # | SDM2009-79 | |
| Date of Issue | 2009-06-17 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2009-84 SDM2009-79 Link to ES Tech. Rep. Archives: ED2009-84 SDM2009-79 |
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| Conference Information | |
| Committee | SDM ED |
| Conference Date | 2009-06-24 - 2009-06-26 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Haeundae Grand Hotel, Busan, Korea |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2009-06-SDM-ED |
| Language | English (Japanese title is available) |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | MOS Transistors fabricated on Si(551) surface based on radical reaction processes |
| Sub Title (in English) | |
| Keyword(1) | Silicon |
| Keyword(2) | surface orientation |
| Keyword(3) | MOSFET |
| Keyword(4) | mobility |
| Keyword(5) | SOI |
| Keyword(6) | accumulation mode |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Akinobu Teramoto |
| 1st Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 2nd Author's Name | Weitao Cheng |
| 2nd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 3rd Author's Name | Chingfoa Tye |
| 3rd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 4th Author's Name | Shigetoshi Sugawa |
| 4th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 5th Author's Name | Tadahiro Ohmi |
| 5th Author's Affiliation | Tohoku University (Tohoku Univ.) |
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| Speaker | Author-1 |
| Date Time | 2009-06-25 09:30:00 |
| Presentation Time | 30 minutes |
| Registration for | SDM |
| Paper # | ED2009-84, SDM2009-79 |
| Volume (vol) | vol.109 |
| Number (no) | no.97(ED), no.98(SDM) |
| Page | pp.149-152 |
| #Pages | 4 |
| Date of Issue | 2009-06-17 (ED, SDM) |
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