講演抄録/キーワード |
講演名 |
2009-06-25 09:30
[招待講演]ラジカル反応プロセスを用いたシリコン(551)表面上Accumulation-Mode MOSトランジスタ ○寺本章伸・程 イトウ・戴 慶佛・須川成利・大見忠弘(東北大) ED2009-84 SDM2009-79 エレソ技報アーカイブへのリンク:ED2009-84 SDM2009-79 |
抄録 |
(和) |
Though the electron mobility in the channel of MOSFET on Si(100) surface which is currently used for LSI devices is largest of all, the hole mobility is smallest. We have reported that the high quality gate insulator films can be formed on any oriented silicon surfaces by using radical oxidation and radical nitridation. Then, We can use Si(551) surface for fabricating the LSI devices. Si(551) is a surface orientation where 8°off from the Si(110) in [001] direction and is hard to be roughened by alkali solutions. The hole mobility in Si(551) surface is large as Si(100). We demonstrate the high performance CMOS by fabricating accumulation mode MOSFETs on Si(551) surface. |
(英) |
Though the electron mobility in the channel of MOSFET on Si(100) surface which is currently used for LSI devices is largest of all, the hole mobility is smallest. We have reported that the high quality gate insulator films can be formed on any oriented silicon surfaces by using radical oxidation and radical nitridation. Then, We can use Si(551) surface for fabricating the LSI devices. Si(551) is a surface orientation where 8°off from the Si(110) in [001] direction and is hard to be roughened by alkali solutions. The hole mobility in Si(551) surface is large as Si(100). We demonstrate the high performance CMOS by fabricating accumulation mode MOSFETs on Si(551) surface. |
キーワード |
(和) |
シリコン / 面方位 / MOSFET / 移動度 / SOI / 蓄積型 / / |
(英) |
Silicon / surface orientation / MOSFET / mobility / SOI / accumulation mode / / |
文献情報 |
信学技報, vol. 109, no. 98, SDM2009-79, pp. 149-152, 2009年6月. |
資料番号 |
SDM2009-79 |
発行日 |
2009-06-17 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
PDFダウンロード |
ED2009-84 SDM2009-79 エレソ技報アーカイブへのリンク:ED2009-84 SDM2009-79 |