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| Presentation | 2009-06-25 13:15 Effect of Ion-Beam-Induced Damage on Luminescence Properties in Tb-Implanted AlxGa1-xN Ji-Ho Park, Hiroshi Okada, Akihiro Wakahara, Yuzo Furukawa (Toyohashi Univ. of Tech.), Yong-Tae Kim (Dankook Univ.), Jonghan Song (KIST), Ho-Jung Chang (Dankook Univ.), Shin-ichiro Sato, Takeshi Ohshima (JAEA, Takasaki)  ED2009-82 SDM2009-77 Link to ES Tech. Rep. Archives: ED2009-82 SDM2009-77 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We investigated the effect of ion-beam-induced damage on luminescence properties for rare earth ions -doped III-nitride semiconductor. Tb ions were implanted into Al0.35Ga0.65N epi-layers grown by OMVPE, and the dose were in the range of 1×1012 ~ 2.8×1016 Tb/cm2. RBS/C reveals that ion-beam-induced damage level steeply increases when the dose exceed 5×1014 Tb/cm2. Tb-related luminescence properties are much susceptible to defect, because CL intensity begins to saturate even at low dose (1×1013 Tb/cm2) at which expected defect density is very low. Transient decay time became faster as increases Tb ions dose above 1×1013 Tb/cm2. The results suggest that non-radiative defects, perhaps Tb-defect complexes, are formed in low dose condition even though the structural defect density is very low. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Rare Earth / Terbium / AlGaN / Ion-Beam-Damage / III-nitride semiconductor / MOCVD / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 97, ED2009-82, pp. 141-144, June 2009. | |
| Paper # | ED2009-82 | |
| Date of Issue | 2009-06-17 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2009-82 SDM2009-77 Link to ES Tech. Rep. Archives: ED2009-82 SDM2009-77 |
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| Conference Information | |
| Committee | SDM ED |
| Conference Date | 2009-06-24 - 2009-06-26 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Haeundae Grand Hotel, Busan, Korea |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2009-06-SDM-ED |
| Language | English |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of Ion-Beam-Induced Damage on Luminescence Properties in Tb-Implanted AlxGa1-xN |
| Sub Title (in English) | |
| Keyword(1) | Rare Earth |
| Keyword(2) | Terbium |
| Keyword(3) | AlGaN |
| Keyword(4) | Ion-Beam-Damage |
| Keyword(5) | III-nitride semiconductor |
| Keyword(6) | MOCVD |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Ji-Ho Park |
| 1st Author's Affiliation | Toyohashi University of Technology (Toyohashi Univ. of Tech.) |
| 2nd Author's Name | Hiroshi Okada |
| 2nd Author's Affiliation | Toyohashi University of Technology (Toyohashi Univ. of Tech.) |
| 3rd Author's Name | Akihiro Wakahara |
| 3rd Author's Affiliation | Toyohashi University of Technology (Toyohashi Univ. of Tech.) |
| 4th Author's Name | Yuzo Furukawa |
| 4th Author's Affiliation | Toyohashi University of Technology (Toyohashi Univ. of Tech.) |
| 5th Author's Name | Yong-Tae Kim |
| 5th Author's Affiliation | Dankook University (Dankook Univ.) |
| 6th Author's Name | Jonghan Song |
| 6th Author's Affiliation | Korea Institute of Science and Technology (KIST) |
| 7th Author's Name | Ho-Jung Chang |
| 7th Author's Affiliation | Dankook University (Dankook Univ.) |
| 8th Author's Name | Shin-ichiro Sato |
| 8th Author's Affiliation | Japan Atomic Energy Agency (JAEA, Takasaki) |
| 9th Author's Name | Takeshi Ohshima |
| 9th Author's Affiliation | Japan Atomic Energy Agency (JAEA, Takasaki) |
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| Speaker | Author-1 |
| Date Time | 2009-06-25 13:15:00 |
| Presentation Time | 15 minutes |
| Registration for | ED |
| Paper # | ED2009-82, SDM2009-77 |
| Volume (vol) | vol.109 |
| Number (no) | no.97(ED), no.98(SDM) |
| Page | pp.141-144 |
| #Pages | 4 |
| Date of Issue | 2009-06-17 (ED, SDM) |
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