講演抄録/キーワード |
講演名 |
2009-06-25 13:15
Effect of Ion-Beam-Induced Damage on Luminescence Properties in Tb-Implanted AlxGa1-xN ○Ji-Ho Park・Hiroshi Okada・Akihiro Wakahara・Yuzo Furukawa(Toyohashi Univ. of Tech.)・Yong-Tae Kim(Dankook Univ.)・Jonghan Song(KIST)・Ho-Jung Chang(Dankook Univ.)・Shin-ichiro Sato・Takeshi Ohshima(JAEA, Takasaki) ED2009-82 SDM2009-77 エレソ技報アーカイブへのリンク:ED2009-82 SDM2009-77 |
抄録 |
(和) |
(まだ登録されていません) |
(英) |
We investigated the effect of ion-beam-induced damage on luminescence properties for rare earth ions -doped III-nitride semiconductor. Tb ions were implanted into Al0.35Ga0.65N epi-layers grown by OMVPE, and the dose were in the range of 1×1012 ~ 2.8×1016 Tb/cm2. RBS/C reveals that ion-beam-induced damage level steeply increases when the dose exceed 5×1014 Tb/cm2. Tb-related luminescence properties are much susceptible to defect, because CL intensity begins to saturate even at low dose (1×1013 Tb/cm2) at which expected defect density is very low. Transient decay time became faster as increases Tb ions dose above 1×1013 Tb/cm2. The results suggest that non-radiative defects, perhaps Tb-defect complexes, are formed in low dose condition even though the structural defect density is very low. |
キーワード |
(和) |
/ / / / / / / |
(英) |
Rare Earth / Terbium / AlGaN / Ion-Beam-Damage / III-nitride semiconductor / MOCVD / / |
文献情報 |
信学技報, vol. 109, no. 97, ED2009-82, pp. 141-144, 2009年6月. |
資料番号 |
ED2009-82 |
発行日 |
2009-06-17 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
PDFダウンロード |
ED2009-82 SDM2009-77 エレソ技報アーカイブへのリンク:ED2009-82 SDM2009-77 |