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Paper Abstract and Keywords
Presentation 2009-06-25 11:30
Formation and application of InP porous structures on p-n substrates
Taketomo Sato, Naoki Yoshizawa, Hiroyuki Okazaki, Tamotsu Hashizume (Hokkaido Univ.) ED2009-76 SDM2009-71 Link to ES Tech. Rep. Archives: ED2009-76 SDM2009-71
Abstract (in Japanese) (See Japanese page) 
(in English) We demonstrated to form InP porous structures on n-type epitaxial layers grown on p-type (001) substrates. The high-density array of straight pores with 150nm diameter and 5000nm depth was formed by the electrochemical anodization process, where the pore depth could be controlled by the anodization time in the n-type layer. The present p-n InP porous structures show the low optical reflectance in UV-, visible- and near-infrared region. The current transport properties clearly show the rectifying behavior. These features are very promising for practical application to high-efficiency photo-sensitive devices.
Keyword (in Japanese) (See Japanese page) 
(in English) Electrochemical Process / Porous Structure / Indium Phosphide / p-n junction / / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 97, ED2009-76, pp. 117-120, June 2009.
Paper # ED2009-76 
Date of Issue 2009-06-17 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2009-76 SDM2009-71 Link to ES Tech. Rep. Archives: ED2009-76 SDM2009-71

Conference Information
Committee SDM ED  
Conference Date 2009-06-24 - 2009-06-26 
Place (in Japanese) (See Japanese page) 
Place (in English) Haeundae Grand Hotel, Busan, Korea 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To ED 
Conference Code 2009-06-SDM-ED 
Language English (Japanese title is available) 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Formation and application of InP porous structures on p-n substrates 
Sub Title (in English)  
Keyword(1) Electrochemical Process  
Keyword(2) Porous Structure  
Keyword(3) Indium Phosphide  
Keyword(4) p-n junction  
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1st Author's Name Taketomo Sato  
1st Author's Affiliation Hokkaido University (Hokkaido Univ.)
2nd Author's Name Naoki Yoshizawa  
2nd Author's Affiliation Hokkaido University (Hokkaido Univ.)
3rd Author's Name Hiroyuki Okazaki  
3rd Author's Affiliation Hokkaido University (Hokkaido Univ.)
4th Author's Name Tamotsu Hashizume  
4th Author's Affiliation Hokkaido University (Hokkaido Univ.)
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Speaker
Date Time 2009-06-25 11:30:00 
Presentation Time 15 
Registration for ED 
Paper # IEICE-ED2009-76,IEICE-SDM2009-71 
Volume (vol) IEICE-109 
Number (no) no.97(ED), no.98(SDM) 
Page pp.117-120 
#Pages IEICE-4 
Date of Issue IEICE-ED-2009-06-17,IEICE-SDM-2009-06-17 


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