Paper Abstract and Keywords |
Presentation |
2009-06-25 09:30
[Invited Talk]
InGaAs/InP MISFET with epitaxially grown source Yasuyuki Miyamoto, Toru Kanazawa, Hisashi Saito, Kazuhito Furuya (Tokyo Inst. of Tech.) ED2009-72 SDM2009-67 Link to ES Tech. Rep. Archives: ED2009-72 SDM2009-67 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Recently, III-V thin films have been identified as potential candidates for future nMOS channels. High current drivability in these thin films can be achieved if the doping concentration in the source is made to exceed 1 × 1019 cm–3. However, in the case of III-V materials, it is difficult to achieve high doping concentrations using ion implantation techniques. This report includes the results of our attempt to realize an epitaxially grown source, with which high doping concentrations can be achieved. One approach involves the fabrication of an InP/InGaAs composite channel MISFET with InGaAs source and drain by selective regrowth using MOVPE. The other approach involves the use of vertical FETs with a heterolauncher for the ballistic transport of electrons. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
InP/InGaAs / MISFET / regrown source / heterolauncher / dual gate / / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 97, ED2009-72, pp. 99-103, June 2009. |
Paper # |
ED2009-72 |
Date of Issue |
2009-06-17 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2009-72 SDM2009-67 Link to ES Tech. Rep. Archives: ED2009-72 SDM2009-67 |
Conference Information |
Committee |
SDM ED |
Conference Date |
2009-06-24 - 2009-06-26 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Haeundae Grand Hotel, Busan, Korea |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
Paper Information |
Registration To |
ED |
Conference Code |
2009-06-SDM-ED |
Language |
English |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
InGaAs/InP MISFET with epitaxially grown source |
Sub Title (in English) |
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Keyword(1) |
InP/InGaAs |
Keyword(2) |
MISFET |
Keyword(3) |
regrown source |
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heterolauncher |
Keyword(5) |
dual gate |
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1st Author's Name |
Yasuyuki Miyamoto |
1st Author's Affiliation |
Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
2nd Author's Name |
Toru Kanazawa |
2nd Author's Affiliation |
Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
3rd Author's Name |
Hisashi Saito |
3rd Author's Affiliation |
Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
4th Author's Name |
Kazuhito Furuya |
4th Author's Affiliation |
Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
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Speaker |
Author-1 |
Date Time |
2009-06-25 09:30:00 |
Presentation Time |
30 minutes |
Registration for |
ED |
Paper # |
ED2009-72, SDM2009-67 |
Volume (vol) |
vol.109 |
Number (no) |
no.97(ED), no.98(SDM) |
Page |
pp.99-103 |
#Pages |
5 |
Date of Issue |
2009-06-17 (ED, SDM) |
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