講演抄録/キーワード |
講演名 |
2009-06-25 09:30
[招待講演]InGaAs/InP MISFET with epitaxially grown source ○Yasuyuki Miyamoto・Toru Kanazawa・Hisashi Saito・Kazuhito Furuya(Tokyo Inst. of Tech.) ED2009-72 SDM2009-67 エレソ技報アーカイブへのリンク:ED2009-72 SDM2009-67 |
抄録 |
(和) |
Recently, III-V thin films have been identified as potential candidates for future nMOS channels. High current drivability in these thin films can be achieved if the doping concentration in the source is made to exceed 1 × 1019 cm–3. However, in the case of III-V materials, it is difficult to achieve high doping concentrations using ion implantation techniques. This report includes the results of our attempt to realize an epitaxially grown source, with which high doping concentrations can be achieved. One approach involves the fabrication of an InP/InGaAs composite channel MISFET with InGaAs source and drain by selective regrowth using MOVPE. The other approach involves the use of vertical FETs with a heterolauncher for the ballistic transport of electrons. |
(英) |
Recently, III-V thin films have been identified as potential candidates for future nMOS channels. High current drivability in these thin films can be achieved if the doping concentration in the source is made to exceed 1 × 1019 cm–3. However, in the case of III-V materials, it is difficult to achieve high doping concentrations using ion implantation techniques. This report includes the results of our attempt to realize an epitaxially grown source, with which high doping concentrations can be achieved. One approach involves the fabrication of an InP/InGaAs composite channel MISFET with InGaAs source and drain by selective regrowth using MOVPE. The other approach involves the use of vertical FETs with a heterolauncher for the ballistic transport of electrons. |
キーワード |
(和) |
/ / / / / / / |
(英) |
InP/InGaAs / MISFET / regrown source / heterolauncher / dual gate / / / |
文献情報 |
信学技報, vol. 109, no. 97, ED2009-72, pp. 99-103, 2009年6月. |
資料番号 |
ED2009-72 |
発行日 |
2009-06-17 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
PDFダウンロード |
ED2009-72 SDM2009-67 エレソ技報アーカイブへのリンク:ED2009-72 SDM2009-67 |
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