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Paper Abstract and Keywords
Presentation 2009-06-24 14:30
[Invited Talk] Advanced magnetic tunnel junctions for hybrid spintronics/CMOS circuits
Shoji Ikeda (Tohoku Univ.), Jun Hayakawa (Hitachi, Ltd.), Huadong Gan, Kotaro Mizumuma, Ji Ho Park (Tohoku Univ.), Hiroyuki Yamamoto, Katsuya Miura (Hitachi, Ltd./Tohoku Univ.), Haruhiro Hasegawa, Ryutaro Sasaki, Toshiyasu Meguro (Tohoku Univ.), Kenchi Ito (Hitachi, Ltd.), Fumihiro Matsukura, Hideo Ohno (Tohoku Univ.) ED2009-51 SDM2009-46 Link to ES Tech. Rep. Archives: ED2009-51 SDM2009-46
Abstract (in Japanese) (See Japanese page) 
(in English) Magnetoresistive random access memory (MRAM) using magnetic tunnel junctions (MTJs) is one of the candidates of universal memory, which is nonvolatile and has virtually unlimited write endurance. In addition, logic-in-memory using the MTJ technology has been proposed and basic circuit block has been fabricated, which is expected to realize a system with ultra-low-power and reduced interconnection delay. High tunnel magnetoresistance (TMR) ratio of CoFeB/MgO/CoFeB MTJs has made it possible to pursue these applications. I summarize our activities regarding the highest TMR ratio known to date and current induced magnetization switching of the MgO-barrier MTJs.
This work was supported by Research and Development for Next-Generation Information Technology of MEXT.
Keyword (in Japanese) (See Japanese page) 
(in English) tunnel magnetoresistance / current-induced magnetization switching / MgO / CoFeB / synthetic ferrimagnetic free layer / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 98, SDM2009-46, pp. 5-8, June 2009.
Paper # SDM2009-46 
Date of Issue 2009-06-17 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF ED2009-51 SDM2009-46 Link to ES Tech. Rep. Archives: ED2009-51 SDM2009-46

Conference Information
Committee SDM ED  
Conference Date 2009-06-24 - 2009-06-26 
Place (in Japanese) (See Japanese page) 
Place (in English) Haeundae Grand Hotel, Busan, Korea 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To SDM 
Conference Code 2009-06-SDM-ED 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Advanced magnetic tunnel junctions for hybrid spintronics/CMOS circuits 
Sub Title (in English)
Keyword(1) tunnel magnetoresistance  
Keyword(2) current-induced magnetization switching  
Keyword(3) MgO  
Keyword(4) CoFeB  
Keyword(5) synthetic ferrimagnetic free layer  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Shoji Ikeda  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Jun Hayakawa  
2nd Author's Affiliation Advanced Research Laboratory, Hitachi, Ltd. (Hitachi, Ltd.)
3rd Author's Name Huadong Gan  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Kotaro Mizumuma  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name Ji Ho Park  
5th Author's Affiliation Tohoku University (Tohoku Univ.)
6th Author's Name Hiroyuki Yamamoto  
6th Author's Affiliation Advanced Research Laboratory, Hitachi, Ltd./Tohoku University (Hitachi, Ltd./Tohoku Univ.)
7th Author's Name Katsuya Miura  
7th Author's Affiliation Advanced Research Laboratory, Hitachi, Ltd./Tohoku University (Hitachi, Ltd./Tohoku Univ.)
8th Author's Name Haruhiro Hasegawa  
8th Author's Affiliation Tohoku University (Tohoku Univ.)
9th Author's Name Ryutaro Sasaki  
9th Author's Affiliation Tohoku University (Tohoku Univ.)
10th Author's Name Toshiyasu Meguro  
10th Author's Affiliation Tohoku University (Tohoku Univ.)
11th Author's Name Kenchi Ito  
11th Author's Affiliation Advanced Research Laboratory, Hitachi, Ltd. (Hitachi, Ltd.)
12th Author's Name Fumihiro Matsukura  
12th Author's Affiliation Tohoku University (Tohoku Univ.)
13th Author's Name Hideo Ohno  
13th Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker Author-1 
Date Time 2009-06-24 14:30:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # ED2009-51, SDM2009-46 
Volume (vol) vol.109 
Number (no) no.97(ED), no.98(SDM) 
Page pp.5-8 
#Pages
Date of Issue 2009-06-17 (ED, SDM) 


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