Paper Abstract and Keywords |
Presentation |
2009-06-24 14:30
[Invited Talk]
Advanced magnetic tunnel junctions for hybrid spintronics/CMOS circuits Shoji Ikeda (Tohoku Univ.), Jun Hayakawa (Hitachi, Ltd.), Huadong Gan, Kotaro Mizumuma, Ji Ho Park (Tohoku Univ.), Hiroyuki Yamamoto, Katsuya Miura (Hitachi, Ltd./Tohoku Univ.), Haruhiro Hasegawa, Ryutaro Sasaki, Toshiyasu Meguro (Tohoku Univ.), Kenchi Ito (Hitachi, Ltd.), Fumihiro Matsukura, Hideo Ohno (Tohoku Univ.) ED2009-51 SDM2009-46 Link to ES Tech. Rep. Archives: ED2009-51 SDM2009-46 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Magnetoresistive random access memory (MRAM) using magnetic tunnel junctions (MTJs) is one of the candidates of universal memory, which is nonvolatile and has virtually unlimited write endurance. In addition, logic-in-memory using the MTJ technology has been proposed and basic circuit block has been fabricated, which is expected to realize a system with ultra-low-power and reduced interconnection delay. High tunnel magnetoresistance (TMR) ratio of CoFeB/MgO/CoFeB MTJs has made it possible to pursue these applications. I summarize our activities regarding the highest TMR ratio known to date and current induced magnetization switching of the MgO-barrier MTJs.
This work was supported by Research and Development for Next-Generation Information Technology of MEXT. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
tunnel magnetoresistance / current-induced magnetization switching / MgO / CoFeB / synthetic ferrimagnetic free layer / / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 98, SDM2009-46, pp. 5-8, June 2009. |
Paper # |
SDM2009-46 |
Date of Issue |
2009-06-17 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2009-51 SDM2009-46 Link to ES Tech. Rep. Archives: ED2009-51 SDM2009-46 |
Conference Information |
Committee |
SDM ED |
Conference Date |
2009-06-24 - 2009-06-26 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Haeundae Grand Hotel, Busan, Korea |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2009-06-SDM-ED |
Language |
English |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Advanced magnetic tunnel junctions for hybrid spintronics/CMOS circuits |
Sub Title (in English) |
* |
Keyword(1) |
tunnel magnetoresistance |
Keyword(2) |
current-induced magnetization switching |
Keyword(3) |
MgO |
Keyword(4) |
CoFeB |
Keyword(5) |
synthetic ferrimagnetic free layer |
Keyword(6) |
|
Keyword(7) |
|
Keyword(8) |
|
1st Author's Name |
Shoji Ikeda |
1st Author's Affiliation |
Tohoku University (Tohoku Univ.) |
2nd Author's Name |
Jun Hayakawa |
2nd Author's Affiliation |
Advanced Research Laboratory, Hitachi, Ltd. (Hitachi, Ltd.) |
3rd Author's Name |
Huadong Gan |
3rd Author's Affiliation |
Tohoku University (Tohoku Univ.) |
4th Author's Name |
Kotaro Mizumuma |
4th Author's Affiliation |
Tohoku University (Tohoku Univ.) |
5th Author's Name |
Ji Ho Park |
5th Author's Affiliation |
Tohoku University (Tohoku Univ.) |
6th Author's Name |
Hiroyuki Yamamoto |
6th Author's Affiliation |
Advanced Research Laboratory, Hitachi, Ltd./Tohoku University (Hitachi, Ltd./Tohoku Univ.) |
7th Author's Name |
Katsuya Miura |
7th Author's Affiliation |
Advanced Research Laboratory, Hitachi, Ltd./Tohoku University (Hitachi, Ltd./Tohoku Univ.) |
8th Author's Name |
Haruhiro Hasegawa |
8th Author's Affiliation |
Tohoku University (Tohoku Univ.) |
9th Author's Name |
Ryutaro Sasaki |
9th Author's Affiliation |
Tohoku University (Tohoku Univ.) |
10th Author's Name |
Toshiyasu Meguro |
10th Author's Affiliation |
Tohoku University (Tohoku Univ.) |
11th Author's Name |
Kenchi Ito |
11th Author's Affiliation |
Advanced Research Laboratory, Hitachi, Ltd. (Hitachi, Ltd.) |
12th Author's Name |
Fumihiro Matsukura |
12th Author's Affiliation |
Tohoku University (Tohoku Univ.) |
13th Author's Name |
Hideo Ohno |
13th Author's Affiliation |
Tohoku University (Tohoku Univ.) |
14th Author's Name |
|
14th Author's Affiliation |
() |
15th Author's Name |
|
15th Author's Affiliation |
() |
16th Author's Name |
|
16th Author's Affiliation |
() |
17th Author's Name |
|
17th Author's Affiliation |
() |
18th Author's Name |
|
18th Author's Affiliation |
() |
19th Author's Name |
|
19th Author's Affiliation |
() |
20th Author's Name |
|
20th Author's Affiliation |
() |
Speaker |
Author-1 |
Date Time |
2009-06-24 14:30:00 |
Presentation Time |
30 minutes |
Registration for |
SDM |
Paper # |
ED2009-51, SDM2009-46 |
Volume (vol) |
vol.109 |
Number (no) |
no.97(ED), no.98(SDM) |
Page |
pp.5-8 |
#Pages |
4 |
Date of Issue |
2009-06-17 (ED, SDM) |
|