Paper Abstract and Keywords |
Presentation |
2009-06-24 16:15
Electrical characteristics of OFETs with thin gate dielectric Young-uk Song, Shun-ichiro Ohmi, Hiroshi Ishiwara (Tokyo Inst. of Tech.) ED2009-63 SDM2009-58 Link to ES Tech. Rep. Archives: ED2009-63 SDM2009-58 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In order to realize low voltage operation of pentacene-based field-effect-transistors (FETs), we have fabricated pantacene-based metal-oxide-semiconductor (MOS) diodes and FETs with thin SiO2 gate dielectric, such as 3-10 nm. Excellent capacitance-voltage (C-V) characteristics of pentacene-based MOS diodes were observed with small hysteresis width even though the gate dielectric thickness was very thin, such as 3 nm. It also showed high mobility as 0.3 cm2/Vs and low operation voltage in the pentacene FETs. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
pentacene / OFETs / pentacene mobility / low operation voltage / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 97, ED2009-63, pp. 59-62, June 2009. |
Paper # |
ED2009-63 |
Date of Issue |
2009-06-17 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2009-63 SDM2009-58 Link to ES Tech. Rep. Archives: ED2009-63 SDM2009-58 |
Conference Information |
Committee |
SDM ED |
Conference Date |
2009-06-24 - 2009-06-26 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Haeundae Grand Hotel, Busan, Korea |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
Paper Information |
Registration To |
ED |
Conference Code |
2009-06-SDM-ED |
Language |
English |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Electrical characteristics of OFETs with thin gate dielectric |
Sub Title (in English) |
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Keyword(1) |
pentacene |
Keyword(2) |
OFETs |
Keyword(3) |
pentacene mobility |
Keyword(4) |
low operation voltage |
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1st Author's Name |
Young-uk Song |
1st Author's Affiliation |
Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
2nd Author's Name |
Shun-ichiro Ohmi |
2nd Author's Affiliation |
Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
3rd Author's Name |
Hiroshi Ishiwara |
3rd Author's Affiliation |
Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
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Speaker |
Author-1 |
Date Time |
2009-06-24 16:15:00 |
Presentation Time |
15 minutes |
Registration for |
ED |
Paper # |
ED2009-63, SDM2009-58 |
Volume (vol) |
vol.109 |
Number (no) |
no.97(ED), no.98(SDM) |
Page |
pp.59-62 |
#Pages |
4 |
Date of Issue |
2009-06-17 (ED, SDM) |
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