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Paper Abstract and Keywords
Presentation 2009-06-24 14:00
[Invited Talk] CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband
Toshihide Suzuki, Yoichi Kawano (Fujitsu/Fujitsu Labs.), Masaru Sato (Fujitsu Labs.), Yasuhiro Nakasha, Tatsuya Hirose (Fujitsu/Fujitsu Labs.), Naoki Hara (Fujitsu Labs.), Kazukiyo Joshin (Fujitsu/Fujitsu Labs.) ED2009-50 SDM2009-45 Link to ES Tech. Rep. Archives: ED2009-50 SDM2009-45
Abstract (in Japanese) (See Japanese page) 
(in English) This paper presents quasi-millimeter and millimeter power amplifiers (PA) fabricated in a standard 90-nm CMOS process. A 20-GHz pseudo-differential power amplifier (PA) with two-stage cascode configuration is designed with the impedance of 6.25ohm for input and 25ohm for output on the assumption of using an off-chip transformer for power combining. Each amplifier performs a saturation power of 20 dBm with a linear gain of 18 dB. The supply voltage is 2.4 V, and the chip size is 2.0 × 1.8 mm2. A 77-GHz power amplifier with four-stage single configuration designed with the 50ohm impedance for input and output. The PA achieved a saturation power of 11.3 dBm with a linear gain of 9.7 dB.
Keyword (in Japanese) (See Japanese page) 
(in English) CMOS / PA / millimeter-wave / / / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 97, ED2009-50, pp. 1-4, June 2009.
Paper # ED2009-50 
Date of Issue 2009-06-17 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2009-50 SDM2009-45 Link to ES Tech. Rep. Archives: ED2009-50 SDM2009-45

Conference Information
Committee SDM ED  
Conference Date 2009-06-24 - 2009-06-26 
Place (in Japanese) (See Japanese page) 
Place (in English) Haeundae Grand Hotel, Busan, Korea 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To ED 
Conference Code 2009-06-SDM-ED 
Language English (Japanese title is available) 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband 
Sub Title (in English)  
Keyword(1) CMOS  
Keyword(2) PA  
Keyword(3) millimeter-wave  
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1st Author's Name Toshihide Suzuki  
1st Author's Affiliation Fujitsu/Fujitsu Laboratories (Fujitsu/Fujitsu Labs.)
2nd Author's Name Yoichi Kawano  
2nd Author's Affiliation Fujitsu/Fujitsu Laboratories (Fujitsu/Fujitsu Labs.)
3rd Author's Name Masaru Sato  
3rd Author's Affiliation Fujitsu Laboratories (Fujitsu Labs.)
4th Author's Name Yasuhiro Nakasha  
4th Author's Affiliation Fujitsu/Fujitsu Laboratories (Fujitsu/Fujitsu Labs.)
5th Author's Name Tatsuya Hirose  
5th Author's Affiliation Fujitsu/Fujitsu Laboratories (Fujitsu/Fujitsu Labs.)
6th Author's Name Naoki Hara  
6th Author's Affiliation Fujitsu Laboratories (Fujitsu Labs.)
7th Author's Name Kazukiyo Joshin  
7th Author's Affiliation Fujitsu/Fujitsu Laboratories (Fujitsu/Fujitsu Labs.)
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Speaker
Date Time 2009-06-24 14:00:00 
Presentation Time 30 
Registration for ED 
Paper # IEICE-ED2009-50,IEICE-SDM2009-45 
Volume (vol) IEICE-109 
Number (no) no.97(ED), no.98(SDM) 
Page pp.1-4 
#Pages IEICE-4 
Date of Issue IEICE-ED-2009-06-17,IEICE-SDM-2009-06-17 


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