Paper Abstract and Keywords |
Presentation |
2009-06-24 14:00
[Invited Talk]
Metrology of microscopic properties of graphene on SiC Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima, Hiroshi Yamaguchi (NTT BRL) ED2009-61 SDM2009-56 Link to ES Tech. Rep. Archives: ED2009-61 SDM2009-56 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Graphene has recently attracted a lot of research interest because of its superior electric properties. Thermally grown epitaxial graphene on SiC substrate is promising for future electronic devices because of its compatibility with existing wafer-scale manufacturing. In this paper, microscopic metrological methods for graphene on SiC will be discussed. A layer number determination method using low-energy electron microscopy (LEEM) enables us to control the layer number and morphology of few-layer graphene. Local conductance measurements using an integrated nanogap probe based on scanning probe microscopy reveal the electrical properties of graphene nanoislands and double-layer graphene sheets on SiC. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Graphene / SiC / LEEM / SPM / nano-gap electrode / local conductance / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 98, SDM2009-56, pp. 47-52, June 2009. |
Paper # |
SDM2009-56 |
Date of Issue |
2009-06-17 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2009-61 SDM2009-56 Link to ES Tech. Rep. Archives: ED2009-61 SDM2009-56 |
Conference Information |
Committee |
SDM ED |
Conference Date |
2009-06-24 - 2009-06-26 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Haeundae Grand Hotel, Busan, Korea |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2009-06-SDM-ED |
Language |
English (Japanese title is available) |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Metrology of microscopic properties of graphene on SiC |
Sub Title (in English) |
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Keyword(1) |
Graphene |
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SiC |
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LEEM |
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SPM |
Keyword(5) |
nano-gap electrode |
Keyword(6) |
local conductance |
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1st Author's Name |
Masao Nagase |
1st Author's Affiliation |
NTT Basic Research Labs., Nippon telegraph and Telephone Corp. (NTT BRL) |
2nd Author's Name |
Hiroki Hibino |
2nd Author's Affiliation |
NTT Basic Research Labs., Nippon telegraph and Telephone Corp. (NTT BRL) |
3rd Author's Name |
Hiroyuki Kageshima |
3rd Author's Affiliation |
NTT Basic Research Labs., Nippon telegraph and Telephone Corp. (NTT BRL) |
4th Author's Name |
Hiroshi Yamaguchi |
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NTT Basic Research Labs., Nippon telegraph and Telephone Corp. (NTT BRL) |
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Speaker |
Author-1 |
Date Time |
2009-06-24 14:00:00 |
Presentation Time |
30 minutes |
Registration for |
SDM |
Paper # |
ED2009-61, SDM2009-56 |
Volume (vol) |
vol.109 |
Number (no) |
no.97(ED), no.98(SDM) |
Page |
pp.47-52 |
#Pages |
6 |
Date of Issue |
2009-06-17 (ED, SDM) |
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