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Paper Abstract and Keywords
Presentation 2009-06-19 16:20
Formation of Pr Oxide by Atomic Layer Deposition Using Pr(EtCp)3.
Hiroki Kondo, Kazuya Furuta, Hirotaka Matsui, Mitsuo Sakashita, Shigeaki Zaima (Nagoya Univ.) Link to ES Tech. Rep. Archives: SDM2009-41
Abstract (in Japanese) (See Japanese page) 
(in English) Formation of Pr oxide by atomic layer deposition (ALD) using Pr(EtCp)3 precursor was investigated, and ALD growth of Pr oxides with thickness variation less than 2% was achieved. Polycrystalline and epitaxially-grown Pr2O3 films with cubic structures were formed on Si(100) and Si(111) substrates, respectively. A dielectric constant of these films is obtained to be 12.3 to 16.8. Comparing crystalline structures of Pr oxides formed by CVD, ALD, and MBE, it is expected that the crystalline structure of the ALD-Pr oxide can be controlled by optimization of the H2O partial pressure.
Keyword (in Japanese) (See Japanese page) 
(in English) Atomic layer deposition / Pr(EtCp)3 / High-k / Pr2O3 / PrO2 / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 87, SDM2009-41, pp. 81-85, June 2009.
Paper # SDM2009-41 
Date of Issue 2009-06-12 (SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Conference Information
Committee SDM  
Conference Date 2009-06-19 - 2009-06-19 
Place (in Japanese) (See Japanese page) 
Place (in English) An401・402 Inst. Indus. Sci., The Univ. of Tokyo 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technology for Dielectric Thin Films for MIS Devices 
Paper Information
Registration To SDM 
Conference Code 2009-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Formation of Pr Oxide by Atomic Layer Deposition Using Pr(EtCp)3. 
Sub Title (in English)  
Keyword(1) Atomic layer deposition  
Keyword(2) Pr(EtCp)3  
Keyword(3) High-k  
Keyword(4) Pr2O3  
Keyword(5) PrO2  
1st Author's Name Hiroki Kondo  
1st Author's Affiliation Nagoya University (Nagoya Univ.)
2nd Author's Name Kazuya Furuta  
2nd Author's Affiliation Nagoya University (Nagoya Univ.)
3rd Author's Name Hirotaka Matsui  
3rd Author's Affiliation Nagoya University (Nagoya Univ.)
4th Author's Name Mitsuo Sakashita  
4th Author's Affiliation Nagoya University (Nagoya Univ.)
5th Author's Name Shigeaki Zaima  
5th Author's Affiliation Nagoya University (Nagoya Univ.)
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Date Time 2009-06-19 16:20:00 
Presentation Time 20 
Registration for SDM 
Paper # IEICE-SDM2009-41 
Volume (vol) IEICE-109 
Number (no) no.87 
Page pp.81-85 
#Pages IEICE-5 
Date of Issue IEICE-SDM-2009-06-12 

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