Paper Abstract and Keywords |
Presentation |
2009-06-12 11:00
Electric characteristics of recessed gate MIS-AlGaN/GaN-HEMT with a thermal CVD SiN gate insulator film. Toshiharu Marui, Shinichi Hoshi, Fumihiko Toda, Yoshiaki Morino, Masanori Itoh, Hideyuki Okita, Isao Tamai, Shohei Seki (Oki Electric Industry Co.,Ltd.) ED2009-47 Link to ES Tech. Rep. Archives: ED2009-47 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Normally-off characteristics are needed from the viewpoint of safety when AlGaN/GaN-HEMT applies for the high power switching applications. However, enhancement mode operation of AlGaN/GaN-HEMT is difficult because of its high density two dimensional electron gas (2DEG) at AlGaN/GaN heterostructure even if using the recessed gate structure. In this paper, we have achieved excellent normally-off performance of threshold voltage (Vth) of +0.62 V and maximum drain current (Idmax) of 0.52 A/mm by the MIS structure using thermal CVD SiN gate insulator film with recessed gate. We have also reported good RF characteristics of cut-off frequency (fT) of 11.1 GHz and maximum oscillation frequency (fmax) = 40.6 GHz in the devices. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
AlGaN / GaN / HEMT / MIS structure with recessed gate / thermal CVD SiN insulator / normally off / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 81, ED2009-47, pp. 57-62, June 2009. |
Paper # |
ED2009-47 |
Date of Issue |
2009-06-04 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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ED2009-47 Link to ES Tech. Rep. Archives: ED2009-47 |
Conference Information |
Committee |
ED |
Conference Date |
2009-06-11 - 2009-06-12 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
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Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
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Paper Information |
Registration To |
ED |
Conference Code |
2009-06-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Electric characteristics of recessed gate MIS-AlGaN/GaN-HEMT with a thermal CVD SiN gate insulator film. |
Sub Title (in English) |
|
Keyword(1) |
AlGaN |
Keyword(2) |
GaN |
Keyword(3) |
HEMT |
Keyword(4) |
MIS structure with recessed gate |
Keyword(5) |
thermal CVD SiN insulator |
Keyword(6) |
normally off |
Keyword(7) |
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Keyword(8) |
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1st Author's Name |
Toshiharu Marui |
1st Author's Affiliation |
Oki Electric Industry Co.,Ltd. (Oki Electric Industry Co.,Ltd.) |
2nd Author's Name |
Shinichi Hoshi |
2nd Author's Affiliation |
Oki Electric Industry Co.,Ltd. (Oki Electric Industry Co.,Ltd.) |
3rd Author's Name |
Fumihiko Toda |
3rd Author's Affiliation |
Oki Electric Industry Co.,Ltd. (Oki Electric Industry Co.,Ltd.) |
4th Author's Name |
Yoshiaki Morino |
4th Author's Affiliation |
Oki Electric Industry Co.,Ltd. (Oki Electric Industry Co.,Ltd.) |
5th Author's Name |
Masanori Itoh |
5th Author's Affiliation |
Oki Electric Industry Co.,Ltd. (Oki Electric Industry Co.,Ltd.) |
6th Author's Name |
Hideyuki Okita |
6th Author's Affiliation |
Oki Electric Industry Co.,Ltd. (Oki Electric Industry Co.,Ltd.) |
7th Author's Name |
Isao Tamai |
7th Author's Affiliation |
Oki Electric Industry Co.,Ltd. (Oki Electric Industry Co.,Ltd.) |
8th Author's Name |
Shohei Seki |
8th Author's Affiliation |
Oki Electric Industry Co.,Ltd. (Oki Electric Industry Co.,Ltd.) |
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Speaker |
Author-1 |
Date Time |
2009-06-12 11:00:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2009-47 |
Volume (vol) |
vol.109 |
Number (no) |
no.81 |
Page |
pp.57-62 |
#Pages |
6 |
Date of Issue |
2009-06-04 (ED) |
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