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Paper Abstract and Keywords
Presentation 2009-06-11 16:25
Improvement in Device Performance in MIS AlGaN/GaN HFETs by Designing Insulator/AlGaN/GaN Structures
Narihiko Maeda, Masanobu Hiroki, Takatomo Enoki (NTT), Takashi Kobayashi (NTT AT) ED2009-42 Link to ES Tech. Rep. Archives: ED2009-42
Abstract (in Japanese) (See Japanese page) 
(in English) To improve the device performance of GaN-based Metal-Insulator-Semiconductor (MIS) heterostructure field-effect transistors (HFETs), the layer design of MIS AlGaN/GaN HFETs has been investigated by considering the insulator/AlGaN structures as the total barrier layers of MIS HFETs. With an increased insulator thickness and decreased AlGaN thickness, where the gate capacitance is kept constant, a high transconductance was successfully obtained that was equivalent to that of HFET, in addition to the reduced gate leakage current in MIS HFETs. Channel doping design has also been proposed to incorporate into MIS HFETs to modulate the threshold voltage aiming at the same application of depression mode as conventional HFETs. In a MIS HFET with channel doping design, a significantly reduced gate leakage current was obtained with a transconductance and threshold voltage that are kept close to typical values of HFETs, indicating that the device has a potential to replace conventional HFETs.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN-based HFET / AlGaN/GaN HFET / MIS HFET / Al2O3/Si3N4 insulated-gate / insulator engineering / channel doping / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 81, ED2009-42, pp. 31-36, June 2009.
Paper # ED2009-42 
Date of Issue 2009-06-04 (ED) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2009-42 Link to ES Tech. Rep. Archives: ED2009-42

Conference Information
Committee ED  
Conference Date 2009-06-11 - 2009-06-12 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2009-06-ED 
Language English (Japanese title is available) 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Improvement in Device Performance in MIS AlGaN/GaN HFETs by Designing Insulator/AlGaN/GaN Structures 
Sub Title (in English)  
Keyword(1) GaN-based HFET  
Keyword(2) AlGaN/GaN HFET  
Keyword(3) MIS HFET  
Keyword(4) Al2O3/Si3N4 insulated-gate  
Keyword(5) insulator engineering  
Keyword(6) channel doping  
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Keyword(8)  
1st Author's Name Narihiko Maeda  
1st Author's Affiliation NTT Photonics Laboratories (NTT)
2nd Author's Name Masanobu Hiroki  
2nd Author's Affiliation NTT Photonics Laboratories (NTT)
3rd Author's Name Takatomo Enoki  
3rd Author's Affiliation NTT Photonics Laboratories (NTT)
4th Author's Name Takashi Kobayashi  
4th Author's Affiliation NTT Advanced Technology Corporation (NTT AT)
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Speaker
Date Time 2009-06-11 16:25:00 
Presentation Time 25 
Registration for ED 
Paper # IEICE-ED2009-42 
Volume (vol) IEICE-109 
Number (no) no.81 
Page pp.31-36 
#Pages IEICE-6 
Date of Issue IEICE-ED-2009-06-04 


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