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Paper Abstract and Keywords
Presentation 2009-04-24 17:05
Metal Induced Lateral Crystallization of PECVD a-Si and Its Impact on TFT Performance
Shintaro Kanoh, Sho Nagata, Gou Nakagawa, Tanemasa Asano (Kyushu Univ.) SDM2009-7 OME2009-7 Link to ES Tech. Rep. Archives: SDM2009-7 OME2009-7
Abstract (in Japanese) (See Japanese page) 
(in English) In the case of solid phase crystallization of amorphous Si (a-Si) deposited by plasma-enhanced chemical vapor deposition (PECVD), it is difficult to clearly observe the spontaneous nucleation and growth in contrast to the case of a-Si films deposited by evaporation in ultra-high vacuum. The polycrystalline films thus crystallized from PECVD deposited a-Si films show small carrier mobility when they are applied to TFTs. In this paper, metal induced lateral crystallization (MILC) has been applied to a-Si films prepared by PECVD. It has better carrier mobility and a similar growth characteristic to the film crystallized from a-Si deposited in ultra-high vacuum. Results of an attempt of grain filtering carried out by patterning a-Si films prior to MILC are also described.
Keyword (in Japanese) (See Japanese page) 
(in English) polycrystalline silicon / thin film transistor / plasma-enhanced chemical vapor deposition / metal induced lateral crystallization / MILC / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 19, SDM2009-7, pp. 29-34, April 2009.
Paper # SDM2009-7 
Date of Issue 2009-04-17 (SDM, OME) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2009-7 OME2009-7 Link to ES Tech. Rep. Archives: SDM2009-7 OME2009-7

Conference Information
Committee OME SDM  
Conference Date 2009-04-24 - 2009-04-24 
Place (in Japanese) (See Japanese page) 
Place (in English) AIST Kyushu-center 
Topics (in Japanese) (See Japanese page) 
Topics (in English) TFT Materials, Devices, Applications, Analysis and Others related to SDM and OME activity 
Paper Information
Registration To SDM 
Conference Code 2009-04-OME-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Metal Induced Lateral Crystallization of PECVD a-Si and Its Impact on TFT Performance 
Sub Title (in English)  
Keyword(1) polycrystalline silicon  
Keyword(2) thin film transistor  
Keyword(3) plasma-enhanced chemical vapor deposition  
Keyword(4) metal induced lateral crystallization  
Keyword(5) MILC  
1st Author's Name Shintaro Kanoh  
1st Author's Affiliation Kyushu University (Kyushu Univ.)
2nd Author's Name Sho Nagata  
2nd Author's Affiliation Kyushu University (Kyushu Univ.)
3rd Author's Name Gou Nakagawa  
3rd Author's Affiliation Kyushu University (Kyushu Univ.)
4th Author's Name Tanemasa Asano  
4th Author's Affiliation Kyushu University (Kyushu Univ.)
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Date Time 2009-04-24 17:05:00 
Presentation Time 25 
Registration for SDM 
Paper # IEICE-SDM2009-7,IEICE-OME2009-7 
Volume (vol) IEICE-109 
Number (no) no.19(SDM), no.20(OME) 
Page pp.29-34 
#Pages IEICE-6 
Date of Issue IEICE-SDM-2009-04-17,IEICE-OME-2009-04-17 

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