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Paper Abstract and Keywords
Presentation 2009-03-13 14:40
Solid State Power Amplifier with GaN FET for Ku-band
Ryo Mochizuki, Tatsuya Fukushima, Hiroaki Iwabuchi, Yoshio Yamada, Takao Kato (Toshiba Corp.) EMCJ2008-121
Abstract (in Japanese) (See Japanese page) 
(in English) In this paper, we present a solid state power amplifier (SSPA) for Ku-band applications. This is the first report of SSPA using with gallium nitride (GaN) field effect transistors (FETs), which output power exceeds 50W as world commercial record for Ku-band. We apply a linearization technique to GaN FETs' power amplifiers for the purpose of improving a linearity of RF module. The intermodulation distortion is under -25dBc with 50dBm output power at -10C to +45C. The SSPA controls RF gain stability with a temperature compensator for FETs which connected with 12 steps straightly.
Keyword (in Japanese) (See Japanese page) 
(in English) SNG / SSPA / Gallium Nitride / GaN HEMT / Ku-band / Intermodulation Distortion / Temperature compensator /  
Reference Info. IEICE Tech. Rep., vol. 108, pp. 43-48, March 2009.
Paper #  
Date of Issue 2009-03-06 (EMCJ) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee EMCJ ITE-BCT  
Conference Date 2009-03-13 - 2009-03-13 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ITE-BCT 
Conference Code 2009-03-EMCJ-BCT 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Solid State Power Amplifier with GaN FET for Ku-band 
Sub Title (in English)  
Keyword(1) SNG  
Keyword(2) SSPA  
Keyword(3) Gallium Nitride  
Keyword(4) GaN HEMT  
Keyword(5) Ku-band  
Keyword(6) Intermodulation Distortion  
Keyword(7) Temperature compensator  
Keyword(8)  
1st Author's Name Ryo Mochizuki  
1st Author's Affiliation Toshiba Corporation (Toshiba Corp.)
2nd Author's Name Tatsuya Fukushima  
2nd Author's Affiliation Toshiba Corporation (Toshiba Corp.)
3rd Author's Name Hiroaki Iwabuchi  
3rd Author's Affiliation Toshiba Corporation (Toshiba Corp.)
4th Author's Name Yoshio Yamada  
4th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
5th Author's Name Takao Kato  
5th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
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Speaker Author-1 
Date Time 2009-03-13 14:40:00 
Presentation Time 25 minutes 
Registration for ITE-BCT 
Paper # EMCJ2008-121 
Volume (vol) vol.108 
Number (no) no.482 
Page pp.43-48 
#Pages
Date of Issue 2009-03-06 (EMCJ) 


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