Paper Abstract and Keywords |
Presentation |
2009-03-13 14:40
Solid State Power Amplifier with GaN FET for Ku-band Ryo Mochizuki, Tatsuya Fukushima, Hiroaki Iwabuchi, Yoshio Yamada, Takao Kato (Toshiba Corp.) EMCJ2008-121 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In this paper, we present a solid state power amplifier (SSPA) for Ku-band applications. This is the first report of SSPA using with gallium nitride (GaN) field effect transistors (FETs), which output power exceeds 50W as world commercial record for Ku-band. We apply a linearization technique to GaN FETs' power amplifiers for the purpose of improving a linearity of RF module. The intermodulation distortion is under -25dBc with 50dBm output power at -10C to +45C. The SSPA controls RF gain stability with a temperature compensator for FETs which connected with 12 steps straightly. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
SNG / SSPA / Gallium Nitride / GaN HEMT / Ku-band / Intermodulation Distortion / Temperature compensator / |
Reference Info. |
IEICE Tech. Rep., vol. 108, pp. 43-48, March 2009. |
Paper # |
|
Date of Issue |
2009-03-06 (EMCJ) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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EMCJ2008-121 |
Conference Information |
Committee |
EMCJ ITE-BCT |
Conference Date |
2009-03-13 - 2009-03-13 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
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Paper Information |
Registration To |
ITE-BCT |
Conference Code |
2009-03-EMCJ-BCT |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Solid State Power Amplifier with GaN FET for Ku-band |
Sub Title (in English) |
|
Keyword(1) |
SNG |
Keyword(2) |
SSPA |
Keyword(3) |
Gallium Nitride |
Keyword(4) |
GaN HEMT |
Keyword(5) |
Ku-band |
Keyword(6) |
Intermodulation Distortion |
Keyword(7) |
Temperature compensator |
Keyword(8) |
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1st Author's Name |
Ryo Mochizuki |
1st Author's Affiliation |
Toshiba Corporation (Toshiba Corp.) |
2nd Author's Name |
Tatsuya Fukushima |
2nd Author's Affiliation |
Toshiba Corporation (Toshiba Corp.) |
3rd Author's Name |
Hiroaki Iwabuchi |
3rd Author's Affiliation |
Toshiba Corporation (Toshiba Corp.) |
4th Author's Name |
Yoshio Yamada |
4th Author's Affiliation |
Toshiba Corporation (Toshiba Corp.) |
5th Author's Name |
Takao Kato |
5th Author's Affiliation |
Toshiba Corporation (Toshiba Corp.) |
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Speaker |
Author-1 |
Date Time |
2009-03-13 14:40:00 |
Presentation Time |
25 minutes |
Registration for |
ITE-BCT |
Paper # |
EMCJ2008-121 |
Volume (vol) |
vol.108 |
Number (no) |
no.482 |
Page |
pp.43-48 |
#Pages |
6 |
Date of Issue |
2009-03-06 (EMCJ) |