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Paper Abstract and Keywords
Presentation 2009-02-26 13:30
[Invited Talk] Epitaxial Graphene Grown on Si Substrate and Its Applications to Electron Devices
Taiichi Otsuji, Tetsuya Suemitsu, Hyon-Choru Kang, Hiromi Karasawa, Yuu Miyamoto, Hiroyuki Handa, Maki Suemitsu (Tohoku Univ.), Eiichi Sano (Hokkaido Univ.), Maxim Ryzhii, Victor Ryzhii (Univ. of Aizu) ED2008-224 SDM2008-216 Link to ES Tech. Rep. Archives: ED2008-224 SDM2008-216
Abstract (in Japanese) (See Japanese page) 
(in English) This paper reviews recent advances in graphene material epitaxially grown on Si substrate and its applications to electron devices. Exfoliation from highly-oriented pyrolitic graphite and surface decomposition of epitaxial SiC are well-known as graphene formation technologies. However, when it is introduced to the post-CMOS VLSIs as the key material, introduction of Si substrate as the starting material as well as practically low-temperature, reproducible growth technology are mandatory. To cope with those issues we developed “graphene-on-silicon” material growth technology consisting of epitaxial growth of 3C-SiC onto Si substrate using organo-silan gas-source MBE and surface decomposition processes. By utilizing such a new GOS material to form the channel with graphene, we succeeded in the transistor operation. This is the first step ahead; we have recognized existing subjects for ultra-high performance, mass-productive device fabrication. The exceptional electronic properties of graphene can devise wide variety of new devices including plasmonic devices and terahertz lasers which will also be described.
Keyword (in Japanese) (See Japanese page) 
(in English) graphene / epitaxial growth / silicon / FET / CMOS / terahertz / laser /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 437, ED2008-224, pp. 1-6, Feb. 2009.
Paper # ED2008-224 
Date of Issue 2009-02-19 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2008-224 SDM2008-216 Link to ES Tech. Rep. Archives: ED2008-224 SDM2008-216

Conference Information
Committee SDM ED  
Conference Date 2009-02-26 - 2009-02-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Hokkaido Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Functional nanodevices and related technologies 
Paper Information
Registration To ED 
Conference Code 2009-02-SDM-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Epitaxial Graphene Grown on Si Substrate and Its Applications to Electron Devices 
Sub Title (in English)  
Keyword(1) graphene  
Keyword(2) epitaxial growth  
Keyword(3) silicon  
Keyword(4) FET  
Keyword(5) CMOS  
Keyword(6) terahertz  
Keyword(7) laser  
Keyword(8)  
1st Author's Name Taiichi Otsuji  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Tetsuya Suemitsu  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Hyon-Choru Kang  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Hiromi Karasawa  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name Yuu Miyamoto  
5th Author's Affiliation Tohoku University (Tohoku Univ.)
6th Author's Name Hiroyuki Handa  
6th Author's Affiliation Tohoku University (Tohoku Univ.)
7th Author's Name Maki Suemitsu  
7th Author's Affiliation Tohoku University (Tohoku Univ.)
8th Author's Name Eiichi Sano  
8th Author's Affiliation Hokkaido University (Hokkaido Univ.)
9th Author's Name Maxim Ryzhii  
9th Author's Affiliation University of Aizu (Univ. of Aizu)
10th Author's Name Victor Ryzhii  
10th Author's Affiliation University of Aizu (Univ. of Aizu)
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Speaker Author-1 
Date Time 2009-02-26 13:30:00 
Presentation Time 40 minutes 
Registration for ED 
Paper # ED2008-224, SDM2008-216 
Volume (vol) vol.108 
Number (no) no.437(ED), no.438(SDM) 
Page pp.1-6 
#Pages
Date of Issue 2009-02-19 (ED, SDM) 


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