IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2009-01-29 09:20
Reverse current reduction of Ge pin photodiodes on Si without post-growth annealing
Sungbong Park, Shinya Takita, Yasuhiko Ishikawa, Jiro Osaka, Kazumi Wada (Univ. of Tokyo) PN2008-44 OPE2008-147 LQE2008-144 Link to ES Tech. Rep. Archives: OPE2008-147 LQE2008-144
Abstract (in Japanese) (See Japanese page) 
(in English) (Not available yet)
Keyword (in Japanese) (See Japanese page) 
(in English) Ge photodiode on Si / Reverse leakage current / Back-end process / / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 419, LQE2008-144, pp. 11-15, Jan. 2009.
Paper # LQE2008-144 
Date of Issue 2009-01-22 (PN, OPE, LQE) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF PN2008-44 OPE2008-147 LQE2008-144 Link to ES Tech. Rep. Archives: OPE2008-147 LQE2008-144

Conference Information
Committee PN OPE EMT LQE  
Conference Date 2009-01-29 - 2009-01-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto Institute Technology (Matsugasaki Campus) 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2009-01-PN-OPE-EMT-LQE 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Reverse current reduction of Ge pin photodiodes on Si without post-growth annealing 
Sub Title (in English)  
Keyword(1) Ge photodiode on Si  
Keyword(2) Reverse leakage current  
Keyword(3) Back-end process  
Keyword(4)  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Sungbong Park  
1st Author's Affiliation The University of Tokyo (Univ. of Tokyo)
2nd Author's Name Shinya Takita  
2nd Author's Affiliation The University of Tokyo (Univ. of Tokyo)
3rd Author's Name Yasuhiko Ishikawa  
3rd Author's Affiliation The University of Tokyo (Univ. of Tokyo)
4th Author's Name Jiro Osaka  
4th Author's Affiliation The University of Tokyo (Univ. of Tokyo)
5th Author's Name Kazumi Wada  
5th Author's Affiliation The University of Tokyo (Univ. of Tokyo)
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker
Date Time 2009-01-29 09:20:00 
Presentation Time 25 
Registration for LQE 
Paper # IEICE-PN2008-44,IEICE-OPE2008-147,IEICE-LQE2008-144 
Volume (vol) IEICE-108 
Number (no) no.417(PN), no.418(OPE), no.419(LQE) 
Page pp.11-15 
#Pages IEICE-5 
Date of Issue IEICE-PN-2009-01-22,IEICE-OPE-2009-01-22,IEICE-LQE-2009-01-22 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan