IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2009-01-15 14:50
High-frequency and low-noise performances of InP-based HEMTs for millimeter-wave monolithic integrated circuits
Issei Watanabe, Akira Endoh (National Inst. of Info.&Com. Tech.), Takashi Mimura (National Inst. of Info.&Com. Tech/Fujitsu Lab. Limited,), Toshiaki Matsui (National Inst. of Info.&Com. Tech.) ED2008-214 MW2008-179 Link to ES Tech. Rep. Archives: ED2008-214 MW2008-179
Abstract (in Japanese) (See Japanese page) 
(in English) InP-based high electron mobility transistors (HEMTs) are the most promising devices not only for future high-speed and high-frequency wireless communications but also expansion of radio spectrum resources in millimeter- (30-300 GHz) and sub-millimeter-wave (300 GHz-3 THz) frequency bands. In this contribution, we measured noise characteristics of 35-nm-gate In0.7Ga0.3As/In0.52Al0.48As HEMTs at a frequency of 90 GHz, and achieved a minimum noise figure (NFmin) of 0.8 dB and an associated gain (Ga) of 5.7 dB when biased at a drain-source voltage (Vds) of 0.8 V and a gate-source voltage (Vgs) of -0.1 V. Furthermore, we also obtained an NFmin of 1.0 dB, a cutoff frequency (fT) of 520 GHz and a maximum oscillation frequency (fmax) of 425 GHz when biased at Vds = 0.8 V and Vgs = 0.0 V. The simultaneous achievement of high fT, high fmax and low NFmin is the first demonstration for InP-based HEMTs with over 500-GHz-fT.
Keyword (in Japanese) (See Japanese page) 
(in English) InP-based HEMT / InGaAs / InAlAs / minimum noise figure (NFmin) / cutoff frequency (fT) / maximum oscillation frequency (fmax) / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 376, ED2008-214, pp. 95-99, Jan. 2009.
Paper # ED2008-214 
Date of Issue 2009-01-07 (ED, MW) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2008-214 MW2008-179 Link to ES Tech. Rep. Archives: ED2008-214 MW2008-179

Conference Information
Committee MW ED  
Conference Date 2009-01-14 - 2009-01-16 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor ICs, High-speed and high-frequency devices 
Paper Information
Registration To ED 
Conference Code 2009-01-MW-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) High-frequency and low-noise performances of InP-based HEMTs for millimeter-wave monolithic integrated circuits 
Sub Title (in English)  
Keyword(1) InP-based HEMT  
Keyword(2) InGaAs  
Keyword(3) InAlAs  
Keyword(4) minimum noise figure (NFmin)  
Keyword(5) cutoff frequency (fT)  
Keyword(6) maximum oscillation frequency (fmax)  
Keyword(7)  
Keyword(8)  
1st Author's Name Issei Watanabe  
1st Author's Affiliation National Institute of Info. & Com. Tech. (National Inst. of Info.&Com. Tech.)
2nd Author's Name Akira Endoh  
2nd Author's Affiliation National Institute of Info. & Com. Tech. (National Inst. of Info.&Com. Tech.)
3rd Author's Name Takashi Mimura  
3rd Author's Affiliation Fujitsu Laboratores Limited (National Inst. of Info.&Com. Tech/Fujitsu Lab. Limited,)
4th Author's Name Toshiaki Matsui  
4th Author's Affiliation National Institute of Info. & Com. Tech. (National Inst. of Info.&Com. Tech.)
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker
Date Time 2009-01-15 14:50:00 
Presentation Time 25 
Registration for ED 
Paper # IEICE-ED2008-214,IEICE-MW2008-179 
Volume (vol) IEICE-108 
Number (no) no.376(ED), no.377(MW) 
Page pp.95-99 
#Pages IEICE-5 
Date of Issue IEICE-ED-2009-01-07,IEICE-MW-2009-01-07 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan