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Paper Abstract and Keywords
Presentation 2008-12-19 15:05
Ultrahigh-Speed Operations of InAlAs/In0.7Ga0.3As HEMTs under Cryogenic Conditions
Akira Endoh, Issei Watanabe (NICT), Keisuke Shinohara (NICT/HRL Labs.), Takashi Mimura (Fujitsu Labs.), Toshiaki Matsui (NICT) ED2008-187 Link to ES Tech. Rep. Archives: ED2008-187
Abstract (in Japanese) (See Japanese page) 
(in English) DC and RF characteristics at 300 and 16 K of In0.52Al0.48As/In0.7Ga0.3As HEMTs were measured in the gate length Lg range of 50 to 700 nm. The maximum drain-source current Ids and the maximum transconductance gm_max increased at 16 K as expected. We observed an increase of 21 to 36% in the value of the cutoff frequency fT at 16 K over that at 300 K. We obtained the average electron velocity under the gate by a delay time analysis. The velocities were 4.8×107 cm/s at 300 K and 6.4×107 cm/s at 16 K. Furthermore, we measured fT values at 300, 77, and 16 K of a 30-nm-gate HEMT that had a multi-layer cap structure to reduce source and drain resistances under various bias conditions. The maximum fT was 603 GHz at 16 K under a drain-source voltage Vds of 0.8 V. Even at a Vds of 0.4 V, we obtained an fT of 500 GHz at 16 K. This indicates that the cryogenic HEMTs are favorable for low-voltage and ultrahigh-speed operations.
Keyword (in Japanese) (See Japanese page) 
(in English) InAlAs/InGaAs / HEMT / Cryogenic characteristics / Cutoff frequency / fT / Delay time analysis / Electron velocity /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 369, ED2008-187, pp. 15-20, Dec. 2008.
Paper # ED2008-187 
Date of Issue 2008-12-12 (ED) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2008-187 Link to ES Tech. Rep. Archives: ED2008-187

Conference Information
Committee ED  
Conference Date 2008-12-19 - 2008-12-20 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Millimeter-wave, THz-wave Devices and Systems 
Paper Information
Registration To ED 
Conference Code 2008-12-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Ultrahigh-Speed Operations of InAlAs/In0.7Ga0.3As HEMTs under Cryogenic Conditions 
Sub Title (in English)  
Keyword(1) InAlAs/InGaAs  
Keyword(2) HEMT  
Keyword(3) Cryogenic characteristics  
Keyword(4) Cutoff frequency  
Keyword(5) fT  
Keyword(6) Delay time analysis  
Keyword(7) Electron velocity  
Keyword(8)  
1st Author's Name Akira Endoh  
1st Author's Affiliation National Institute of Information and Communications Technology (NICT)
2nd Author's Name Issei Watanabe  
2nd Author's Affiliation National Institute of Information and Communications Technology (NICT)
3rd Author's Name Keisuke Shinohara  
3rd Author's Affiliation HRL Laboratories, LLC (NICT/HRL Labs.)
4th Author's Name Takashi Mimura  
4th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Labs.)
5th Author's Name Toshiaki Matsui  
5th Author's Affiliation National Institute of Information and Communications Technology (NICT)
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Speaker
Date Time 2008-12-19 15:05:00 
Presentation Time 25 
Registration for ED 
Paper # IEICE-ED2008-187 
Volume (vol) IEICE-108 
Number (no) no.369 
Page pp.15-20 
#Pages IEICE-6 
Date of Issue IEICE-ED-2008-12-12 


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