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Paper Abstract and Keywords
Presentation 2008-12-19 13:50
Si quantum wells by thermal oxidation and Er-doped structures
Ryusuke Osaki, Yasuhiko Ishikawa (Univ. of Tokyo), Yoshifumi Yamashita, Yoichi Kamiura (Okayama Univ.), Kazumi Wada (Univ. of Tokyo) OPE2008-138 Link to ES Tech. Rep. Archives: OPE2008-138
Abstract (in Japanese) (See Japanese page) 
(in English) Er-doped Si has attracted much attention as a possible candidate for 1.5 μm light-emitting material in Silicon photonics. However, there has been a problem of the strong luminescence quenching toward higher temperatures. In this work, we propose a method for effective light emition from Er-doped Si using quantum well structures. The fabrication process using thermal oxidation of silicon-on-insulator (SOI) later is also described.
Keyword (in Japanese) (See Japanese page) 
(in English) Silicon / Erbium / Light emission / Thermal quenching / Quantum wells / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 370, OPE2008-138, pp. 11-16, Dec. 2008.
Paper # OPE2008-138 
Date of Issue 2008-12-12 (OPE) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF OPE2008-138 Link to ES Tech. Rep. Archives: OPE2008-138

Conference Information
Committee OPE  
Conference Date 2008-12-19 - 2008-12-19 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Optical passive components(optical filter, conector, MEMS), Si photonics, Optical fiber, etc 
Paper Information
Registration To OPE 
Conference Code 2008-12-OPE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Si quantum wells by thermal oxidation and Er-doped structures 
Sub Title (in English)  
Keyword(1) Silicon  
Keyword(2) Erbium  
Keyword(3) Light emission  
Keyword(4) Thermal quenching  
Keyword(5) Quantum wells  
1st Author's Name Ryusuke Osaki  
1st Author's Affiliation University of Tokyo (Univ. of Tokyo)
2nd Author's Name Yasuhiko Ishikawa  
2nd Author's Affiliation University of Tokyo (Univ. of Tokyo)
3rd Author's Name Yoshifumi Yamashita  
3rd Author's Affiliation Okayama University (Okayama Univ.)
4th Author's Name Yoichi Kamiura  
4th Author's Affiliation Okayama University (Okayama Univ.)
5th Author's Name Kazumi Wada  
5th Author's Affiliation University of Tokyo (Univ. of Tokyo)
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Date Time 2008-12-19 13:50:00 
Presentation Time 25 
Registration for OPE 
Paper # IEICE-OPE2008-138 
Volume (vol) IEICE-108 
Number (no) no.370 
Page pp.11-16 
#Pages IEICE-6 
Date of Issue IEICE-OPE-2008-12-12 

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