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| Presentation | 2008-12-12 15:10 Development of II-VI materials on InP substrates for green semiconductor laser diodes Ichirou Nomura, Katsumi Kishino, Tomoya Ebisawa, Shun Kushida, Kunihiko Tasai, Hitoshi Nakamura, Tsunenori Asatsuma, Hiroshi Nakajima (Sophia Univ.)  LQE2008-138 Link to ES Tech. Rep. Archives: LQE2008-138 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | MgZnCdSe, BeZnTe, and BeZnSeTe II-VI compound semiconductors grown on InP substrates are very attractive for middle visible range, especially green light emitting devices. We have developed these materials and emitting devices composed of BeZnSeTe active, MgSe/ZnCdSe superlattice (SL) n-cladding, and MgSe/BeZnTe SL p-cladding layers. Long lifetime operations beyond 5000h were achieved for the devices, which shows a remarkable improvement of the aging characteristic of II-VI devices. We succeeded in photopumped green lasing at room temperature for the double heterostructures having a BeZnSeTe active layer to indicate a high potentiality of BeZnSeTe as an active layer of green laser diodes. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | InP substrate / II-VI compound semiconductor / green emission / light emitting device / long lifetime / laser / photopumped lasing / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 351, LQE2008-138, pp. 53-58, Dec. 2008. | |
| Paper # | LQE2008-138 | |
| Date of Issue | 2008-12-05 (LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | LQE2008-138 Link to ES Tech. Rep. Archives: LQE2008-138 |
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| Conference Information | |
| Committee | LQE |
| Conference Date | 2008-12-12 - 2008-12-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2008-12-LQE |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Development of II-VI materials on InP substrates for green semiconductor laser diodes |
| Sub Title (in English) | |
| Keyword(1) | InP substrate |
| Keyword(2) | II-VI compound semiconductor |
| Keyword(3) | green emission |
| Keyword(4) | light emitting device |
| Keyword(5) | long lifetime |
| Keyword(6) | laser |
| Keyword(7) | photopumped lasing |
| Keyword(8) | |
| 1st Author's Name | Ichirou Nomura |
| 1st Author's Affiliation | Sophia University (Sophia Univ.) |
| 2nd Author's Name | Katsumi Kishino |
| 2nd Author's Affiliation | Sophia University (Sophia Univ.) |
| 3rd Author's Name | Tomoya Ebisawa |
| 3rd Author's Affiliation | Sophia University (Sophia Univ.) |
| 4th Author's Name | Shun Kushida |
| 4th Author's Affiliation | Sophia University (Sophia Univ.) |
| 5th Author's Name | Kunihiko Tasai |
| 5th Author's Affiliation | Sophia University (Sophia Univ.) |
| 6th Author's Name | Hitoshi Nakamura |
| 6th Author's Affiliation | Sophia University (Sophia Univ.) |
| 7th Author's Name | Tsunenori Asatsuma |
| 7th Author's Affiliation | Sophia University (Sophia Univ.) |
| 8th Author's Name | Hiroshi Nakajima |
| 8th Author's Affiliation | Sophia University (Sophia Univ.) |
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| Speaker | Author-1 |
| Date Time | 2008-12-12 15:10:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | LQE2008-138 |
| Volume (vol) | vol.108 |
| Number (no) | no.351 |
| Page | pp.53-58 |
| #Pages | 6 |
| Date of Issue | 2008-12-05 (LQE) |
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