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| Presentation | 2008-12-05 14:30 Improved Performance of an SiC MOSFET by a Three-Dimensional Gate Structure Yuichiro Nanen, Hironori Yoshioka, Masato Noborio, Jun Suda, Tsunenobu Kimoto (Kyoto Univ)  SDM2008-191 Link to ES Tech. Rep. Archives: SDM2008-191 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | 4H-SiC (0001) MOSFETs with a three-dimensional gate structure, which has side-wall channels on the {11-20} face have been fabricated. Drain current is expected to increase due to geometrical effects of the three-dimensional gate structure and high channel mobility on the {11-20} face. The fabricated MOSFETs have exhibited superior characteristics: the subthreshold swing and VTH are, 210 mV/decade and 3.8 V, respectively. The drain current normalized by the gate width is increasing with decreasing the gate width. The normalized drain current of a 1 um-wide MOSFET is twenty times higher than that of a conventional planar MOSFET. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | silicon carbide (SiC) / MOSFET / three-dimensional gate structure / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 335, SDM2008-191, pp. 37-41, Dec. 2008. | |
| Paper # | SDM2008-191 | |
| Date of Issue | 2008-11-28 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2008-191 Link to ES Tech. Rep. Archives: SDM2008-191 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2008-12-05 - 2008-12-05 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyoto University, Katsura Campus, A1-001 |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Fabrication and Characterization of Si and Si-related Materials and Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2008-12-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Improved Performance of an SiC MOSFET by a Three-Dimensional Gate Structure |
| Sub Title (in English) | |
| Keyword(1) | silicon carbide (SiC) |
| Keyword(2) | MOSFET |
| Keyword(3) | three-dimensional gate structure |
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| 1st Author's Name | Yuichiro Nanen |
| 1st Author's Affiliation | Kyoto University (Kyoto Univ) |
| 2nd Author's Name | Hironori Yoshioka |
| 2nd Author's Affiliation | Kyoto University (Kyoto Univ) |
| 3rd Author's Name | Masato Noborio |
| 3rd Author's Affiliation | Kyoto University (Kyoto Univ) |
| 4th Author's Name | Jun Suda |
| 4th Author's Affiliation | Kyoto University (Kyoto Univ) |
| 5th Author's Name | Tsunenobu Kimoto |
| 5th Author's Affiliation | Kyoto University (Kyoto Univ) |
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| Speaker | Author-1 |
| Date Time | 2008-12-05 14:30:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2008-191 |
| Volume (vol) | vol.108 |
| Number (no) | no.335 |
| Page | pp.37-41 |
| #Pages | 5 |
| Date of Issue | 2008-11-28 (SDM) |
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