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| Presentation | 2008-12-05 13:50 Electrical Properties of Bio-Nano-Dot Floating-gate MOSFETs with Ultra-thin Tunnel Oxide Hiroyuki Irifune, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki, Ichiro Yamashita (Nara Institute ofScience and Tecnology)  SDM2008-189 Link to ES Tech. Rep. Archives: SDM2008-189 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | So far, we have already developed floating gate memory devices using bio-nano-dot (BND). In this study, we fabricated and characterized BND floating-gate MOSFETs with ultra-thin tunnel oxide. Drain current-gate voltage (Id-Vg) characteristics showed clear hysteresis, but it was not a parallel shift when using ultra-thin tunnel oxide of 1.5 nm. Electrons in the channel are captured by the BND during gate voltage sweep, and then threshold voltage increases resulting in decreased drain current. Retention characteristics are also discussed. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | bio-nano-process / nanodot device / direct tunneling / ultra thin tunneling oxide / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 335, SDM2008-189, pp. 27-30, Dec. 2008. | |
| Paper # | SDM2008-189 | |
| Date of Issue | 2008-11-28 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2008-189 Link to ES Tech. Rep. Archives: SDM2008-189 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2008-12-05 - 2008-12-05 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyoto University, Katsura Campus, A1-001 |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Fabrication and Characterization of Si and Si-related Materials and Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2008-12-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical Properties of Bio-Nano-Dot Floating-gate MOSFETs with Ultra-thin Tunnel Oxide |
| Sub Title (in English) | |
| Keyword(1) | bio-nano-process |
| Keyword(2) | nanodot device |
| Keyword(3) | direct tunneling |
| Keyword(4) | ultra thin tunneling oxide |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Hiroyuki Irifune |
| 1st Author's Affiliation | Nara Institute ofScience and Tecnology (Nara Institute ofScience and Tecnology) |
| 2nd Author's Name | Hiroshi Yano |
| 2nd Author's Affiliation | Nara Institute ofScience and Tecnology (Nara Institute ofScience and Tecnology) |
| 3rd Author's Name | Yukiharu Uraoka |
| 3rd Author's Affiliation | Nara Institute ofScience and Tecnology (Nara Institute ofScience and Tecnology) |
| 4th Author's Name | Takashi Fuyuki |
| 4th Author's Affiliation | Nara Institute ofScience and Tecnology (Nara Institute ofScience and Tecnology) |
| 5th Author's Name | Ichiro Yamashita |
| 5th Author's Affiliation | Nara Institute ofScience and Tecnology (Nara Institute ofScience and Tecnology) |
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| Speaker | Author-1 |
| Date Time | 2008-12-05 13:50:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2008-189 |
| Volume (vol) | vol.108 |
| Number (no) | no.335 |
| Page | pp.27-30 |
| #Pages | 4 |
| Date of Issue | 2008-11-28 (SDM) |
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